Panasonic 2SC1473A, 2SC1473 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC1473, 2SC1473A

Silicon NPN triple diffusion planar type

For general amplification

2SC1473 complementary to 2SA1018

2SC1473A complementary to 2SA1767

■ Features

• High collector-emitter voltage (Base open) V

• High transition frequency f

T

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

2SC1473 V

2SC1473A

2SC1473 V

2SC1473A

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

CEO

250 V

300

200 V

300

7V

70 mA

100 mA

750 mW

150 °C

Unit: mm

5.0

±0.2

±0.2

5.1

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.5

12.9

0.7

±0.1

+0.15

0.45

–0.1

+0.6

2.5

–0.2

123

EIAJ: SC-43A TO-92-B1 Package

0.45

4.0

±0.2

+0.15
–0.1

1: Emitter
2: Collector
3: Base

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector-emitter cutoff

current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage V

2SA1473 V

2SA1473A

2SA1473 I

2SA1473A

*

CEOIC

EBOIE

CEO

h

FE

CE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

Publication date: March 2004 SJC00105BED

60 to 150 100 to 220

= 100 µA, IB = 0 200 V

300

= 1 µA, IC = 07V

VCE = 120 V, Ta = 60°C, IB = 01µA

VCE = 120 V, IB = 01

VCE = 10 V, IC = 5 mA 60 220 

= 50 mA, IB = 5 mA 1.2 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 10 pF

ob

1

2SC1473, 2SC1473A

This product complies with the RoHS Directive (EU 2002/95/EC).

1.0

)
W

(

0.8

C

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IC  I

120

100

)

mA
(

80

C

60

40

Collector current I

20

PC  T

a

B

)

VCE = 10 V

= 25°C

T

a

IC  V

120

100

)

mA

(

80

0.8 mA

C

60

40

Collector current I

20

0

0108264

Collector-emitter voltage VCE (V

100

)

V

(

CE(sat)

10

1

0.1

1.2 mA

1.0 mA

1.6 mA

1.4 mA

V

CE(sat)

1.8 mA

CE

 I

25°C

T

= 25°C

a

IB = 2 mA

C

IC / IB = 10

Ta = 75°C

−25°C

0.6 mA

0.4 mA

0.2 mA

IC  V

120

100

BE

VCE = 10 V

25°C

)

mA
(

C

Ta = 75°C

80

60

40

−25°C

Collector current I

20

0

)

0 2.01.60.4 1.20.8

Base-emitter voltage VBE (V

IB  V

3.0

2.5

BE

)

VCE = 10 V

= 25°C

T

a

)

2.0

mA
(

B

1.5

1.0

Base current I

0.5

0

0 2.01.60.4 1.20.8

Base current IB (mA

hFE  I

360

300

FE

240

180

120

Forward current transfer ratio h

60

0

0.1 1 10 100

Ta = 75°C

25°C

−25°C

Collector current IC (mA

2

C

VCE = 10 V

Collector-emitter saturation voltage V

0.01

)

0.1 1 10 100

Collector current IC (mA

fT  I

160

E

VCB = 10 V
T

= 25°C

a

)

)

120

MHz
(

T

80

40

Transition frequency f

0

−1 −10 −100

)

Emitter current IE (mA

)

0

0 1.00.80.2 0.60.4

CB

IE = 0
f = 1 MHz

= 25°C

T

a

)

)

Base-emitter voltage VBE (V

Cob  V

10

(pF)

ob

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

110100

Collector-base voltage VCB (V

SJC00105BED