Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
■ Features
• High collector-emitter voltage (Base open) V
• High transition frequency f
T
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
2SC1473 V
2SC1473A
2SC1473 V
2SC1473A
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
CEO
250 V
300
200 V
300
7V
70 mA
100 mA
750 mW
150 °C
Unit: mm
5.0
±0.2
±0.2
5.1
2.5
+0.6
–0.2
±0.2
0.7
±0.2
2.3
±0.5
12.9
0.7
±0.1
+0.15
0.45
–0.1
+0.6
2.5
–0.2
123
EIAJ: SC-43A TO-92-B1 Package
0.45
4.0
±0.2
+0.15
–0.1
1: Emitter
2: Collector
3: Base
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector-emitter cutoff
current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage V
2SA1473 V
2SA1473A
2SA1473 I
2SA1473A
*
CEOIC
EBOIE
CEO
h
FE
CE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE
Publication date: March 2004 SJC00105BED
60 to 150 100 to 220
= 100 µA, IB = 0 200 V
300
= 1 µA, IC = 07V
VCE = 120 V, Ta = 60°C, IB = 01µA
VCE = 120 V, IB = 01
VCE = 10 V, IC = 5 mA 60 220
= 50 mA, IB = 5 mA 1.2 V
VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 10 pF
ob
1
2SC1473, 2SC1473A
This product complies with the RoHS Directive (EU 2002/95/EC).
1.0
)
W
(
0.8
C
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
IC I
120
100
)
mA
(
80
C
60
40
Collector current I
20
PC T
a
B
)
VCE = 10 V
= 25°C
T
a
IC V
120
100
)
mA
(
80
0.8 mA
C
60
40
Collector current I
20
0
0108264
Collector-emitter voltage VCE (V
100
)
V
(
CE(sat)
10
1
0.1
1.2 mA
1.0 mA
1.6 mA
1.4 mA
V
CE(sat)
1.8 mA
CE
I
25°C
T
= 25°C
a
IB = 2 mA
C
IC / IB = 10
Ta = 75°C
−25°C
0.6 mA
0.4 mA
0.2 mA
IC V
120
100
BE
VCE = 10 V
25°C
)
mA
(
C
Ta = 75°C
80
60
40
−25°C
Collector current I
20
0
)
0 2.01.60.4 1.20.8
Base-emitter voltage VBE (V
IB V
3.0
2.5
BE
)
VCE = 10 V
= 25°C
T
a
)
2.0
mA
(
B
1.5
1.0
Base current I
0.5
0
0 2.01.60.4 1.20.8
Base current IB (mA
hFE I
360
300
FE
240
180
120
Forward current transfer ratio h
60
0
0.1 1 10 100
Ta = 75°C
25°C
−25°C
Collector current IC (mA
2
C
VCE = 10 V
Collector-emitter saturation voltage V
0.01
)
0.1 1 10 100
Collector current IC (mA
fT I
160
E
VCB = 10 V
T
= 25°C
a
)
)
120
MHz
(
T
80
40
Transition frequency f
0
−1 −10 −100
)
Emitter current IE (mA
)
0
0 1.00.80.2 0.60.4
CB
IE = 0
f = 1 MHz
= 25°C
T
a
)
)
Base-emitter voltage VBE (V
Cob V
10
(pF)
ob
C
8
6
4
2
Collector output capacitance
(Common base, input open circuited)
0
110100
Collector-base voltage VCB (V
SJC00105BED
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