Panasonic 2SC1384, 2SC1383 Datasheet

Transistor

5.9±0.2

2.54±0.15

0.7±0.1

4.9±0.2

8.6±0.2

0.7

+0.3

–0.2

13.5±0.53.2

0.45

+0.2
–0.1

1.271.27

0.45

+0.2
–0.1

132

2SC1383, 2SC1384

Silicon NPN epitaxial planer type

For low-frequency power amplification and driver amplification
Complementary to 2SA683 and 2SA684

Features

■

●

Low collector to emitter saturation voltage V

●

Complementary pair with 2SA683 and 2SA684.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Rank Q R S

h

FE1

2SC1383
2SC1384
2SC1383
2SC1384

Parameter

85 ~ 170 120 ~ 240 170 ~ 340

2SC1383
2SC1384
2SC1383
2SC1384

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Ratings

30
60
25
50

1.5

150

–55 ~ +150

.

CE(sat)

Unit

V

V

5

V

A
1
1

A

W
˚C
˚C

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0
VCE = 10V, IC = 500mA
VCE = 5V, IB = 1A
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

Unit: mm

1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package

min

30
60
25
50

*2

*2

*2

*2

85
50

typ

max

0.1

Unit

µA

V

V

5

160

340

V

100

0.2

0.85
200

11

0.4

1.2
MHz

20

*2

Pulse measurement

V
V

pF

1

Transistor

2SC1383, 2SC1384

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

)

C

IC/IB=10

)

CE

1.5

1.25

)
A

(

1.0

C

0.75

0.5

Collector current I

0.25

0

0108264

Ta=25˚C

IB=10mA

9mA

8mA
7mA

6mA

5mA

4mA

3mA
2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

25˚C

Collector current IC (A

C

IC/IB=10

Ta=–25˚C

75˚C

)

1.2
VCE=10V

Ta=25˚C

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012108264

)

Base current IB (mA

hFE — I

600

FE

500

400

300

Ta=75˚C

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC — I

25˚C
–25˚C

B

)

C

VCE=10V

)

fT — I

200

VCB=10V
Ta=25˚C

180

)

160

MHz

(

140

T

120

100

80

60

40

Transition frequency f

20

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

E

50

)

45

pF

(

40

ob

35

30

25

20

15

10

5

Collector output capacitance C

0

)

Collector to base voltage VCB (V

Cob — V

1 3 10 30 100

CB

IE=0
f=1MHz
Ta=25˚C

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

)

Base to emitter resistance RBE (kΩ

V

— R

CER

0

0.1 1 10 1000.3 3 30

BE

2SC1384

2SC1383

IC=10mA
Ta=25˚C

)