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Transistors
2SC1383, 2SC1384
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0683, 2SA0684
■ Features
• Low collector-emitter saturation voltage V
• Complementary pair with 2SA0683, 2SA0684
CE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SC1383 V
2SC1384 60
2SC1383 V
2SC1384 50
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
30 V
25 V
5V
1A
1.5 A
1W
150 °C
−55 to +150 °C
0.7
±0.1
0.45
5.9
132
+0.2
–0.1
±0.2
(1.27)(1.27)
2.54
+0.3
0.7
–0.2
±0.2
8.6
±0.5
13.5
(3.2)
±0.15
Unit: mm
4.9
±0.2
+0.2
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
2SC1383 V
CBOIC
2SC1384 60
2SC1383 V
CEOIC
2SC1384 50
EBOIE
I
1
*
CBO
h
FE1
h
FE2
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
2: Rank classification
*
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
= 10 µA, IE = 0 30 V
= 2 mA, IB = 025V
= 10 µA, IC = 05V
VCB = 20 V, IE = 0 0.1 µA
2
*
VCE = 10 V, IC = 500 mA 85 340
VCE = 5 V, IC = 1 A 50
= 500 mA, IB = 50 mA 0.2 0.4 V
= 500 mA, IB = 50 mA 0.85 1.20 V
VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
ob
Publication date: March 2003 SJC00104CED
1
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2SC1383, 2SC1384
PC T
1.2
1.0
(W)
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
a
Ambient temperature Ta (°C)
V
I
10
CE(sat)
C
IC / IB = 10
(V)
CE(sat)
1
0.1
0.01
Collector-emitter saturation voltage V
0.001
0.01 0.1 1 10
Ta = 75°C
25°C
−25°C
Collector current IC (A)
IC V
1.50
1.25
(A)
1.00
C
0.75
0.50
CE
IB = 10 mA
Collector current I
0.25
0
0108264
Collector-emitter voltage VCE (V)
V
I
100
BE(sat)
C
IC / IB = 10
(V)
BE(sat)
10
25°C
1
0.1
Ta = −25°C
75°C
Base-emitter saturation voltage V
0.01
0.01 0.1 1 10
Collector current IC (A)
T
a
= 25°C
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
IC I
B
(A)
C
1.2
1.0
0.8
0.6
0.4
VCE = 10 V
= 25°C
T
a
Collector current I
0.2
0
012108264
Base current IB (mA)
hFE I
600
500
FE
400
300
Ta = 75°C
200
Forward current transfer ratio h
100
0
0.01 0.1 1 10
C
VCE = 10 V
25°C
−25°C
Collector current IC (A)
fT I
200
VCB = 10 V
= 25°C
T
a
160
(MHz)
T
120
80
40
Transition frequency f
0
−1 −10 −100
Emitter current IE (mA)
2
E
50
40
(pF)
ob
C
30
20
10
(Common base circuited)
Collector output capacitance
0
1 10 100
Cob V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
120
100
(V)
CER
V
80
60
40
20
Collector-emitter voltage
(Resistor between B and E)
0
0.1 1 10 100
Collector-base voltage VCB (V)
V
R
CER
BE
2SC1384
2SC1383
IC = 10 mA
= 25°C
T
a
Base-emitter resistance RBE (kΩ)
SJC00104CED