Panasonic 2SC1360A, 2SC1360 Datasheet

Transistor

5.9±0.2

2.54±0.15

0.7±0.1

4.9±0.2

8.6±0.2

0.7

+0.3

–0.2

13.5±0.53.2

0.45

+0.2
–0.1

1.271.27

0.45

+0.2
–0.1

132

2SC1360, 2SC1360A

Silicon NPN epitaxial planer type

For intermadiate frequency amplification of TV image

Features

■

●

High transition frequency fT.

●

Large collector power dissipation PC.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SC1360
2SC1360A
2SC1360

2SC1360A
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain

Symbol

2SC1360
2SC1360A
2SC1360
2SC1360A

Ratings

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

50
60
45
60

4

50

1

150

–55 ~ +150

Symbol

I

V

V

V
h
V
f
C
PG

CBO

FE

T

CBO

CEO

EBO

CE(sat)

re

VCB = 20V, IE = 0

IC = 100µA, IE = 0

IC = 1mA, IB = 0

IE = 100µA, IC = 0
VCB = 10V, IE = –10mA
IC = 20mA, IB = 2mA
VCB = 10V, IE = –10mA, f = 100MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –10mA, f = 58MHz

Unit

V

V

V

mA

W
˚C
˚C

Conditions

min

50
60
45
60

4

20

300

22

1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package

typ max

100

100

0.4

1.5
30

Unit: mm

Unit

nA

V

V

V

V

MHz

pF

dB

1

Transistor

2SC1360, 2SC1360A

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

80

70

)

60

mA

(

C

50

40

30

20

Collector current I

10

0

0108264

IB=2.0mA

Collector to emitter voltage VCE (V

hFE — I

C

120

FE

100

80

60

40

20

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0
– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

25˚C

Ta=75˚C

VCB=10V
Ta=25˚C

–25˚C

fT — I

E

Emitter current IE (mA

VCE=10V

)

)

)
pF

(

Cob — V

3.0

2.5

ob

2.0

1.5

1.0

0.5

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

Cre — V

)

–2.4

pF

(

re

–2.0

–1.6

–1.2

– 0.8

– 0.4

Common emitter reverse transfer capacitance C

0

1 3 10 30 100

)

Collector to emitter voltage VCE (V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)
dB

(

Power gain PG

)

PG — I

E

30

25

20

15

10

5

0
– 0.1 –1 –10 –100– 0.3 –3 –30

VCB=10V
f=58MHz
Ta=25˚C

Emitter current IE (mA

)