Panasonic 2SC1360, 2SC1360A Service Manual
Transistors
2SC1360, 2SC1360A
Silicon NPN epitaxial planar type
For intermediate frequency amplification of TV image
■ Features
• High transition frequency f
• Large collector power dissipation P
T
C
■ Absolute Maximum Ratings Ta = 25°C
0.7
±0.1
5.9
±0.2
+0.3
±0.2
8.6
–0.2
0.7
±0.5
13.5
4.9
Unit: mm
±0.2
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SC1360 V
2SC1360A
2SC1360 V
2SC1360A
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
50 V
60
45 V
60
4V
50 mA
1W
150 °C
−55 to +150 °C
0.45
+0.2
–0.1
132
(1.27)(1.27)
2.54
(3.2)
±0.15
+0.2
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
2SC1360 V
2SC1360A
2SC1360 V
2SC1360A
CBOIC
CEOIC
EBOIE
I
CBO
FE
CE(sat)IC
Transition frequency 2SC1360 f
2SC1360A
Reverse transfer capacitance
(Common emitter)
2SC1360 C
2SC1360A
Power gain 2SC1360 G
2SC1360A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
= 100 µA, IE = 050 V
60
= 3 mA, IB = 045V
IC = 1 mA, IB = 060
= 100 µA, IC = 04 V
VCB = 20 V, IE = 0 100 nA
VCE = 10 V, IC = 10 mA 20 50 100
= 20 mA, IB = 2 mA 0.4 V
VCB = 10 V, IE = −10 mA, f = 100 MHz 300 500 MHz
T
300
VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.96 1.5 pF
re
1.5
VCB = 10 V, IE = −10 mA, f = 58 MHz 22 26 30 dB
P
22 30
Publication date: February 2003 SJC00103BED
1
2SC1360, 2SC1360A
PC T
1.2
)
1.0
W
(
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
)
V
(
CE(sat)
100
10
1
0.1
CE(sat)
25°C
a
C
IC / IB = 10
Ta = 75°C
−25°C
IC V
hFE I
Ta = 75°C
−25°C
25°C
CE
C
IB = 2.0 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
VCE = 10 V
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
)
600
VCB = 10 V
T
500
)
MHz
(
400
T
300
200
Transition frequency f
100
80
)
60
mA
(
C
40
20
Collector current I
0
0108264
)
Collector-emitter voltage VCE (V
120
100
FE
80
60
40
Forward current transfer ratio h
20
IC V
BE
25°C
Ta = 75°C
VCE = 10 V
−25°C
Base-emitter voltage VBE (V
fT I
E
= 25°C
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
Cob V
3.0
(pF)
ob
2.5
C
2.0
1.5
1.0
0.5
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
Collector-base voltage VCB (V
2
)
IE = 0
f = 1 MHz
= 25°C
T
a
0
0.1 1 10 100
CE
IC = 1 mA
f = 10.7 MHz
= 25°C
T
a
)
)
Collector current IC (mA
Cre V
2.4
2.0
(pF)
re
C
1.6
1.2
0.8
0.4
(Common emitter)
Reverse transfer capacitance
0
1 10 100
)
Collector-emitter voltage VCE (V
0
− 0.1 −1 −10 −100
Emitter current IE (mA
GP I
30
25
)
20
dB
(
P
15
10
Power gain G
5
0
− 0.1 −1 −10 −100
E
VCB = 10 V
f = 58 MHz
T
= 25°C
a
Emitter current IE (mA
)
)
SJC00103BED
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