Panasonic 2SC1360, 2SC1360A Service Manual

Transistors

2SC1360, 2SC1360A

Silicon NPN epitaxial planar type

For intermediate frequency amplification of TV image

■ Features

• High transition frequency f

• Large collector power dissipation P

T

C

■ Absolute Maximum Ratings Ta = 25°C

0.7

±0.1

5.9

±0.2

+0.3

±0.2

8.6

–0.2

0.7

±0.5

13.5

4.9

Unit: mm

±0.2

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

2SC1360 V

2SC1360A

2SC1360 V

2SC1360A

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

50 V

60

45 V

60

4V

50 mA

1W

150 °C

−55 to +150 °C

0.45

+0.2
–0.1

132

(1.27)(1.27)

2.54

(3.2)

±0.15

+0.2

0.45

–0.1

1: Emitter
2: Collector
3: Base

EIAJ: SC-51

TO-92L-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

2SC1360 V

2SC1360A

2SC1360 V

2SC1360A

CBOIC

CEOIC

EBOIE

I

CBO

FE

CE(sat)IC

Transition frequency 2SC1360 f

2SC1360A

Reverse transfer capacitance

(Common emitter)

2SC1360 C

2SC1360A

Power gain 2SC1360 G

2SC1360A

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

= 100 µA, IE = 050 V

60

= 3 mA, IB = 045V

IC = 1 mA, IB = 060

= 100 µA, IC = 04 V

VCB = 20 V, IE = 0 100 nA

VCE = 10 V, IC = 10 mA 20 50 100 

= 20 mA, IB = 2 mA 0.4 V

VCB = 10 V, IE = −10 mA, f = 100 MHz 300 500 MHz

T

300

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.96 1.5 pF

re

1.5

VCB = 10 V, IE = −10 mA, f = 58 MHz 22 26 30 dB

P

22 30

Publication date: February 2003 SJC00103BED

1

2SC1360, 2SC1360A

PC  T

1.2

)

1.0

W
(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

0.1

CE(sat)

25°C

a

C

IC / IB = 10

Ta = 75°C

−25°C

IC  V

hFE  I

Ta = 75°C

−25°C

25°C

CE

C

IB = 2.0 mA

1.8 mA

1.6 mA

1.4 mA

1.2 mA

1.0 mA

0.8 mA

0.6 mA

0.4 mA

0.2 mA

VCE = 10 V

60

50

)

mA
(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

600

VCB = 10 V
T

500

)

MHz
(

400

T

300

200

Transition frequency f

100

80

)

60

mA

(

C

40

20

Collector current I

0

0108264

)

Collector-emitter voltage VCE (V

120

100

FE

80

60

40

Forward current transfer ratio h

20

IC  V

BE

25°C

Ta = 75°C

VCE = 10 V

−25°C

Base-emitter voltage VBE (V

fT  I

E

= 25°C

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Cob  V

3.0

(pF)

ob

2.5

C

2.0

1.5

1.0

0.5

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

CE

IC = 1 mA
f = 10.7 MHz

= 25°C

T

a

)

)

Collector current IC (mA

Cre  V

2.4

2.0

(pF)

re

C

1.6

1.2

0.8

0.4

(Common emitter)

Reverse transfer capacitance

0

1 10 100

)

Collector-emitter voltage VCE (V

0

− 0.1 −1 −10 −100

Emitter current IE (mA

GP  I

30

25

)

20

dB
(

P

15

10

Power gain G

5

0

− 0.1 −1 −10 −100

E

VCB = 10 V
f = 58 MHz
T

= 25°C

a

Emitter current IE (mA

)

)

SJC00103BED