Panasonic 2SC1359 Datasheet
Transistor
2SC1359
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA838
Features
■
●
Optimum for RF amplification of FM/AM radios.
●
High transition frequency fT.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Symbol
I
CBO
*
h
FE
f
T
NF
Z
rb
C
re
Ratings
–55 ~ +150
Unit
30
20
5
30
400
150
V
V
V
mA
mW
˚C
˚C
Conditions
VCB = 10V, IE = 0
VCB = 10V, IE = –1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
70
150
250
2.8
22
0.9
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
0.1
220
50
1.5
4
Unit: mm
Unit
µA
MHz
dB
Ω
pF
*
hFE Rank classification
Rank B C
h
FE
70 ~ 140 110 ~ 220
1
Transistor 2SC1359
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IB — V
BE
120
100
)
mA
80
(
B
60
40
Base current I
20
0
01.00.80.2 0.60.4
Base to emitter voltage VBE (V
VCE=10V
Ta=25˚C
CE
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
018612
)
Collector to emitter voltage VCE (V
IC — V
60
50
)
mA
)
(
40
C
30
20
Collector current I
10
0
0 2.01.60.4 1.20.8
Base to emitter voltage VBE (V
25˚C
Ta=75˚C
Ta=25˚C
IB=100µA
80µA
60µA
40µA
20µA
BE
VCE=10V
–25˚C
)
15.0
12.5
)
mA
(
10.0
C
7.5
5.0
Collector current I
2.5
0
0 1008020 6040
)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
IC — I
B
VCE=10V
Ta=25˚C
Base current IB (µA
V
— I
CE(sat)
C
IC/IB=10
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
)
hFE — I
C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
2
VCE=10V
fT — I
E
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
– 0.1 –1 –10 –100– 0.3 –3 –30
)
VCB=10V
Emitter current IE (mA
Ta=25˚C
6V
)
60
)
Ω
(
50
rb
40
30
20
10
Reverse transfer impedance Z
0
– 0.1 – 0.3 –1 –3 –10
Zrb — I
E
VCB=10V
f=2MHz
Ta=25˚C
Emitter current IE (mA
)
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