Panasonic 2SC1318A User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC1318A

Silicon NPN epitaxial planar type

For low-frequency driver amplification

Complementary to 2SA0720A

■ Features

• High collector-emitter voltage (Base open) V

• Optimum for the driver stage of a low-frequency and 25 W to 30

W output amplifier

CEO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

80 V

70 V

5V

0.5 A

1A

750 mW

150 °C

−55 to +150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

5.0

±0.2

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.2

5.1

±0.5

12.9

Unit: mm

4.0

±0.2

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

1

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

h

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank Q R S

h

FE1

85 to 170 120 to 240 170 to 340

= 10 µA, IE = 080V

= 2 mA, IB = 070V

= 10 µA, IC = 05V

VCB = 20 V, IE = 0 0.1 µA

2

*

VCE = 10 V, IC = 150 mA 85 340 

VCE = 10 V, IC = 500 mA 40 

= 300 mA, IB = 30 mA 0.2 0.6 V

= 300 mA, IB = 30 mA 0.85 1.50 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF

ob

Publication date: March 2003 SJC00101BED

1

2SC1318A

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

1.2

)

1.0

W
(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C

V

 I

10

)
V

(

CE(sat)

1

0.1

0.01

Collector-emitter saturation voltage V

0.001
1 10 100 1 000

CE(sat)

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (mA

IC  V

BE(sat)

75°C

CE

 I

T

IB = 10 mA

C

IC / IB = 10

25°C

= 25°C

a

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

300

250

FE

200

150

100

Forward current transfer ratio h

50

1.2

1.0

)

A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

Collector-emitter voltage VCE (V

V

100

)

V

(

BE(sat)

10

Ta = −25°C

1

0.1

IC  I

B

Base current IB (mA

hFE  I

C

VCE = 10 V

Ta = 75°C

25°C

−25°C

VCE = 10 V

= 25°C

T

a

)

Base-emitter saturation voltage V

0.01
1 10 100 1 000

)

Collector current IC (mA

)

0

1 10 100 1 000

Collector current IC (mA

)

fT  I

200

)

160

MHz
(

T

120

80

40

Transition frequency f

0

−1 −10 −100

Emitter current IE (mA

E

VCB = 10 V
T

= 25°C

a

)

50

(pF)

ob

C

40

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

2

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

SJC00101BED

4

10

3

10

CBO

VCB = 20 V

a

I

 T

)

)

a

T
(

= 25°C

2

a

10

T

(

CBO

I

CBO

I

10

1

)

0 12080 16040

Ambient temperature Ta (°C

)