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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0720
Features
Low collector-emitter saturation voltage V
Complementary pair with 2SA0720
CE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
60 V
50 V
7 V
0.5 A
1 A
625 mW
150
–55 to +150
°C
°C
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
CBOIC
CEOIC
EBOIE
I
CBO
h
FE1
h
FE2
CE(sat)IC
BE(sat)IC
T
C
= 10 mA, IE = 0 60 V
= 10 mA, IB = 0 50 V
= 10 mA, IC = 0 7 V
VCB = 20 V, IE = 0 0.1
*VCE = 10 V, IC = 150 mA 85 340
VCE = 10 V, IC = 500 mA 40
= 300 mA, IB = 30 mA 0.35 0.60 V
= 300 mA, IB = 30 mA 1.1 1.5 V
VCB = 10 V, IE = –50 mA, f = 200 MHz 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
re
mA
Publication date : October 2008 SJC00420AED 1
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This product complies with the RoHS Directive (EU 2002/95/EC).
0 16040 12080
0
800
600
200
400
Collector power dissipation P
C
(mW)
Ambient temperature Ta (°C)
2SC1318_PC-Ta
0 20164 128
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
Ta = 25°C
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A)
Collector-emitter voltage VCE (V)
2SC1318_IC-VCE
0.01 0.1 1 10
0.01
0.1
1
10
100
IC / IB = 10
Ta = 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current IC (A)
2SC1318_VCE(sat)-IC
0.01 0.1 1 10
0.01
0.1
1
10
100
IC / IB = 10
Ta = 75°C
−25°C
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current IC (A)
2SC1318_VBE(sat)-IC
0.01 0.1 1 10
0
300
250
200
150
100
50
VCE = 10 V
Ta = 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current IC (A)
2SC1318_hFE-IC
−1 −10 −100
0
240
200
160
120
80
40
VCB = 10 V
Ta = 25°C
Transition frequency f
T
(MHz)
Emitter current IE (mA)
2SC1318_fT-IE
1 10 100
0
12
10
8
6
4
2
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage VCB (V)
2SC1318_Cob-VCB
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
1 10 100 1000
0
120
100
80
60
40
20
IC = 2 mA
Ta = 25°C
Base-emitter resistance RBE (kΩ)
2SC1318_VCER-RBE
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
0 1082 64
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
VCE = 10 V
Ta = 25°C
Base current IB (mA)
Collector current I
C
(A)
2SC1318_IC-IB
2SC1318
PC Ta IC VCE IC I
V
IC V
CE(sat)
BE(sat)
I
C
hFE I
B
C
fT IE Cob V
2 SJC00420AED
CB
V
R
CER
BE