Panasonic 2SC1318 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC1318

Silicon NPN epitaxial planar type

For low-frequency power amplification and driver amplification
Complementary to 2SA0720

 Features

 Low collector-emitter saturation voltage V
 Complementary pair with 2SA0720

CE(sat)

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

60 V

50 V

7 V

0.5 A

1 A

625 mW

150

–55 to +150

°C

°C

 Package

Code

TO-92B-B1

Pin Name

1. Emitter

2. Collector

3. Base

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank Q R S

h

FE1

85 to 170 120 to 240 170 to 340

CBOIC

CEOIC

EBOIE

I

CBO

h

FE1

h

FE2

CE(sat)IC

BE(sat)IC

T

C

= 10 mA, IE = 0 60 V

= 10 mA, IB = 0 50 V

= 10 mA, IC = 0 7 V

VCB = 20 V, IE = 0 0.1

*VCE = 10 V, IC = 150 mA 85 340

VCE = 10 V, IC = 500 mA 40

= 300 mA, IB = 30 mA 0.35 0.60 V

= 300 mA, IB = 30 mA 1.1 1.5 V

VCB = 10 V, IE = –50 mA, f = 200 MHz 200 MHz

VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF

re

mA



Publication date : October 2008 SJC00420AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 16040 12080

0

800

600

200

400

Collector power dissipation P

C

(mW)

Ambient temperature Ta (°C)

2SC1318_PC-Ta

0 20164 128

0

0.8

0.6

0.2

0.5

0.7

0.4

0.1

0.3

Ta = 25°C

IB = 10 mA

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

Collector current I

C

(A)

Collector-emitter voltage VCE (V)

2SC1318_IC-VCE

0.01 0.1 1 10

0.01

0.1

1

10

100

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current IC (A)

2SC1318_VCE(sat)-IC

0.01 0.1 1 10

0.01

0.1

1

10

100

IC / IB = 10

Ta = 75°C

−25°C

25°C

Base-emitter saturation voltage V

BE(sat)

(V)

Collector current IC (A)

2SC1318_VBE(sat)-IC

0.01 0.1 1 10

0

300

250

200

150

100

50

VCE = 10 V

Ta = 75°C

25°C

−25°C

Forward current transfer ratio h

FE

Collector current IC (A)

2SC1318_hFE-IC

−1 −10 −100

0

240

200

160

120

80

40

VCB = 10 V
Ta = 25°C

Transition frequency f

T

(MHz)

Emitter current IE (mA)

2SC1318_fT-IE

1 10 100

0

12

10

8

6

4

2

IE = 0
f = 1 MHz
Ta = 25°C

Collector-base voltage VCB (V)

2SC1318_Cob-VCB

Collector output capacitance

(Common base, input open circuited)

C

ob

(pF)

1 10 100 1000

0

120

100

80

60

40

20

IC = 2 mA
Ta = 25°C

Base-emitter resistance RBE (kΩ)

2SC1318_VCER-RBE

Collector-emitter voltage

(Resistor between B and E)

V

CER

(V)

0 1082 64

0

0.8

0.6

0.2

0.5

0.7

0.4

0.1

0.3

VCE = 10 V
Ta = 25°C

Base current IB (mA)

Collector current I

C

(A)

2SC1318_IC-IB

2SC1318

PC  Ta IC  VCE IC  I

V

 IC V

CE(sat)

BE(sat)

 I

C

hFE  I

B

C

fT  IE Cob  V

2 SJC00420AED

CB

V

 R

CER

BE