Page 1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0720
Features
Low collector-emitter saturation voltage V
Complementary pair with 2SA0720
CE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
60 V
50 V
7 V
0.5 A
1 A
625 mW
150
–55 to +150
°C
°C
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
CBOIC
CEOIC
EBOIE
I
CBO
h
FE1
h
FE2
CE(sat)IC
BE(sat)IC
T
C
= 10 mA, IE = 0 60 V
= 10 mA, IB = 0 50 V
= 10 mA, IC = 0 7 V
VCB = 20 V, IE = 0 0.1
*VCE = 10 V, IC = 150 mA 85 340
VCE = 10 V, IC = 500 mA 40
= 300 mA, IB = 30 mA 0.35 0.60 V
= 300 mA, IB = 30 mA 1.1 1.5 V
VCB = 10 V, IE = –50 mA, f = 200 MHz 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
re
mA
Publication date : October 2008 SJC00420AED 1
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC).
0 16040 12080
0
800
600
200
400
Collector power dissipation P
C
(mW)
Ambient temperature Ta (°C)
2SC1318_PC-Ta
0 20164 128
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
Ta = 25°C
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A)
Collector-emitter voltage VCE (V)
2SC1318_IC-VCE
0.01 0.1 1 10
0.01
0.1
1
10
100
IC / IB = 10
Ta = 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current IC (A)
2SC1318_VCE(sat)-IC
0.01 0.1 1 10
0.01
0.1
1
10
100
IC / IB = 10
Ta = 75°C
−25°C
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current IC (A)
2SC1318_VBE(sat)-IC
0.01 0.1 1 10
0
300
250
200
150
100
50
VCE = 10 V
Ta = 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current IC (A)
2SC1318_hFE-IC
−1 −10 −100
0
240
200
160
120
80
40
VCB = 10 V
Ta = 25°C
Transition frequency f
T
(MHz)
Emitter current IE (mA)
2SC1318_fT-IE
1 10 100
0
12
10
8
6
4
2
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage VCB (V)
2SC1318_Cob-VCB
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
1 10 100 1000
0
120
100
80
60
40
20
IC = 2 mA
Ta = 25°C
Base-emitter resistance RBE (kΩ)
2SC1318_VCER-RBE
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
0 1082 64
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
VCE = 10 V
Ta = 25°C
Base current IB (mA)
Collector current I
C
(A)
2SC1318_IC-IB
2SC1318
PC Ta IC VCE IC I
V
IC V
CE(sat)
BE(sat)
I
C
hFE I
B
C
fT IE Cob V
2 SJC00420AED
CB
V
R
CER
BE
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC).
0 20016040 12080
1
10
10
2
10
3
10
4
VCE = 10 V
Ambient temperature Ta (°C)
I
CEO
(T
a
)
I
CEO
(T
a
= 25°C)
2SC1317_ICEO-Ta
0.1 1 10 100
0.001
0.01
0.1
1
10
Single pulse
Ta = 25ºC
t = 10 ms
t = 1 s
DC
I
CP
I
C
Collector current I
C
(A)
Collector-emitter voltage VCE (V)
2SC1318_ASO
2SC1318
I
Ta Safe operation area
CEO
SJC00420AED 3
Page 4
This product complies with the RoHS Directive (EU 2002/95/EC).
TO-92-B1 Unit: mm
5.0 ±0.2
5.1 ±0.212.9 ±0.5
0.7 ±0.2
0.7 ±0.1
0.45
4.0 ±0.2
0.45
2.3 ±0.2
1
2
3
2.5
2.5
+0.15
−0.1
+0.6
−0.2
+0.15
−0.1
+0.6
−0.2
2SC1318
4 SJC00420AED
Page 5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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20080805
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