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Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0719 and 2SA0720
■ Features
• Low collector-emitter saturation voltage V
• Complementary pair with 2SA0719 and 2SA0720
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
2SC1317 V
2SC1318 60
2SC1317 V
2SC1318 50
CE(sat)
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
30 V
25 V
7V
0.5 A
1A
625 mW
150 °C
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
123
5.0
±0.2
2.5
+0.6
–0.2
±0.2
0.7
±0.2
2.3
4.0
±0.2
5.1
±0.5
12.9
+0.15
0.45
–0.1
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Unit: mm
±0.2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC1317 V
CBOIC
2SC1318 60
2SC1317 V
CEOIC
2SC1318 50
EBOIE
I
1
*
CBO
h
FE1
h
FE2
V
CE(sat)IC
V
BE(sat)IC
1
*
1
*
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
2: Rank classification
*
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
= 10 µA, IE = 030V
= 10 mA, IB = 025V
= 10 µA, IC = 07V
VCB = 20 V, IE = 0 0.1 µA
2
*
VCE = 10 V, IC = 150 mA 85 340
VCE = 10 V, IC = 500 mA 40
= 300 mA, IB = 30 mA 0.35 0.60 V
= 300 mA, IB = 30 mA 1.1 1.5 V
VCB = 10 V, IE = −50 mA, f = 200 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
ob
200 MHz
Publication date: March 2003 SJC00100CED
1
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2SC1317, 2SC1318
PC T
800
(mW)
600
C
400
200
a
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C)
V
I
100
CE(sat)
C
IC / IB = 10
(V)
CE(sat)
10
1
0.1
Collector-emitter saturation voltage V
0.01
0.01 0.1 1 10
Ta = 75°C
25°C
−25°C
Collector current IC (A)
IC V
9 mA
8 mA
7 mA
6 mA
CE
5 mA
4 mA
0.8
0.7
0.6
(A)
C
0.5
0.4
0.3
Collector current I
0.2
0.1
0
IB = 10 mA
020164128
Collector-emitter voltage VCE (V)
V
I
100
BE(sat)
C
(V)
BE(sat)
10
25°C
1
0.1
Ta = 75°C
−25°C
Base-emitter saturation voltage V
0.01
0.01 0.1 1 10
Collector current IC (A)
Ta = 25°C
3 mA
2 mA
1 mA
IC / IB = 10
IC I
0.8
0.7
0.6
(A)
C
0.5
0.4
0.3
Collector current I
0.2
0.1
0
0108264
B
Base current IB (mA)
hFE I
300
250
FE
Ta = 75°C
200
150
100
Forward current transfer ratio h
25°C
−25°C
50
0
0.01 0.1 1 10
C
VCE = 10 V
Collector current IC (A)
VCE = 10 V
= 25°C
T
a
fT I
240
200
(MHz)
160
T
120
80
Transition frequency f
40
0
−1 −10 −100
Emitter current IE (mA)
2
E
VCB = 10 V
= 25°C
T
a
Cob V
12
(pF)
ob
10
C
8
6
4
2
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
IE = 0
f = 1 MHz
T
a
Collector-base voltage VCB (V)
SJC00100CED
= 25°C
V
R
120
100
(V)
CER
V
80
60
40
20
Collector-emitter voltage
(Resistor between B and E)
0
1 10 100 1 000
CER
2SC1318
2SC1317
Base-emitter resistance RBE (kΩ)
BE
IC = 2 mA
T
= 25°C
a