Panasonic 2SC1318, 2SC1317 Datasheet
Transistors
5.0
±0.2
0.7
±0.1
(1.27)
13
2
2.54
±0.15
(1.27)
2.3
±0.2
0.45
+0.15
–0.1
0.45
+0.15
–0.1
0.7
±0.2
5.1
±0.2
13.5
±0.5
4.0
±0.2
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
■ Features
• Low collector to emitter saturation voltage V
• Complementary pair with 2SA719 and 2SA720
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
2SC1317 V
CBO
2SC1318 60
2SC1317 V
CEO
2SC1318 50
EBO
CP
C
C
j
stg
CE(sat)
30 V
25 V
7V
1A
500 mA
625 mW
150 °C
−55 to +150 °C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Note)*1: Pulse measurement
2: Rank classification
*
Rank Q R S
h
FE1
2SC1317 V
2SC1318 60
2SC1317 V
2SC1318 50
1
*
1
*
1
*
85 to 170 120 to 240 170 to 340
CBO
CBO
CEO
EBO
2
*
h
FE1
h
FE2
V
CE(sat)IC
V
BE(sat)IC
T
ob
VCB = 20 V, IE = 0 0.1 µA
IC = 10 µA, IE = 030V
IC = 10 mA, IB = 025V
IE = 10 µA, IC = 07V
VCE = 10 V, IC = 150 mA 85 340
VCE = 10 V, IC = 500 mA 40
= 300 mA, IB = 30 mA 0.35 0.6 V
= 300 mA, IB = 30 mA 1.1 1.5 V
VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
1
2SC1317, 2SC1318 Transistors
PC T
800
)
700
mW
(
600
C
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (°C
V
I
)
V
(
CE(sat)
0.03
0.01
Collector to emitter saturation voltage V
100
30
10
3
1
0.3
0.1
0.01 0.03
CE(sat)
Ta = 75°C
25°C
−25°C
0.1 0.3 1 3 10
Collector current IC (A
a
C
IC / IB = 10
)
IC V
CE
800
700
)
600
mA
(
C
500
400
300
200
Collector current I
100
0
)
02048 1612 1826 1410
Collector to emitter voltage VCE (V
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.03
IB = 10 mA
9 mA
V
BE(sat)
25°C
0.1 0.3 1 3 10
Collector current IC (A
8 mA
7 mA
6 mA
I
Ta = 75°C
−25°C
Ta = 25°C
5 mA
4 mA
3 mA
2 mA
1 mA
)
C
IC / IB = 10
)
800
700
)
600
mA
(
C
500
400
300
200
Collector current I
100
0
010864297531
300
250
FE
200
150
100
Forward current transfer ratio h
50
0
0.01 0.03
IC I
B
Base current IB (mA
hFE I
C
Ta = 75°C
25°C
−25°C
0.1 0.3 1 3 10
Collector current IC (A
VCE = 10 V
= 25°C
T
a
)
VCE = 10 V
)
fT I
240
200
)
MHz
(
160
T
120
80
Transition frequency f
40
0
−1 −3 −10−2 −20−5 −50−30 −100
Emitter current IE (mA
2
E
VCB = 10 V
= 25°C
T
a
)
Cob V
12
)
pF
10
(
ob
8
6
4
2
Collector output capacitance C
0
3105502 20 30 100
1
CB
Collector to base voltage VCB (V
IE = 0
f = 1 MHz
= 25°C
T
a
V
R
120
)
V
(
100
CER
80
60
40
20
Collector to emitter voltage V
0
1310 30 100 300 1 000
)
Base to emitter resistance RBE (kΩ
CER
BE
2SC1318
2SC1317
IC = 2 mA
= 25°C
T
a
)
Loading...