Panasonic 2SC1047 Service Manual

Transistors

2SC1047

Silicon NPN epitaxial planar type

For high-frequency amplification

5.0

±0.2

Unit: mm

4.0

±0.2

■ Features

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.2

5.1

±0.5

12.9

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

TO-92-B1 Package

• Optimum for RF amplification of FM/AM radios

• High transition frequency f

T

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

−55 to +150 °C

stg

30 V

20 V

3V

20 mA

400 mW

150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

CBOIC

EBOIE

Base-emitter voltage V

Forward current transfer ratio

*

h

Common-emitter reverse transfer C
capacitance

Transition frequency f

Power gain G

Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 5 dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank C D

h

FE

65 to 160 100 to 260

= 10 µA, IE = 030V

= 10 µA, IC = 03V

VCE = 6 V, IC = 1 mA 0.72 V

BE

VCE = 6 V, IC = 1 mA 65 260 

FE

VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1 pF

re

VCB = 6 V, IE = −1 mA, f = 200 MHz 450 650 MHz

T

VCB = 6 V, IE = −1 mA, f = 100 MHz 20 dB

P

Publication date: November 2002 SJC00099CED

1

2SC1047

PC  T

500

400

(mW)

C

300

200

100

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

IC  V

30

Ta = 75°C

25°C

−25°C

25

20

(mA)

C

15

10

Collector current I

5

BE

a

VCE = 6 V

IC  V

12

10

8

(mA)

C

6

4

Collector current I

2

0

012186

Collector-emitter voltage VCE (V)

V

 I

CE(sat)

25°C

Ta = 75°C

−25°C

(V)

CE(sat)

100

10

1

0.1

CE

Ta = 25°C

IB = 100 µA

80 µA

60 µA

40 µA

20 µA

C

IC / IB = 10

IC  I

12

10

(mA)

C

VCE = 10 V

8

6

4

B

6 V

Collector current I

2

0

0 12060 180

Base current IB (µA)

hFE  I

360

300

FE

240

180

120

Forward current transfer ratio h

60

C

Ta = 75°C

25°C

−25°C

Ta = 25°C

VCE = 6 V

0

0 2.01.60.4 1.20.8

Base-emitter voltage VBE (V)

fT  I

1 200

1 000

(MHz)

800

T

600

400

Transition frequency f

200

0

− 0.1 −1 −10 −100

E

VCB = 10 V

6 V

Emitter current IE (mA)

2

Ta = 25°C

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA)

Zrb  I

120

100

(Ω)

rb

80

60

40

20

Reverse transfer impedance Z

0

− 0.1 −1 −10

E

f = 2 MHz
T

VCE = 6 V

= 25°C

a

10 V

Emitter current IE (mA)

SJC00099CED

0

0.1 1 10 100

Collector current IC (mA)

Cre  V

2.4

(pF)

re

2.0

C

1.6

1.2

0.8

0.4

Common-emitter reverse transfer capacitance

0

0.1 1 10 100

CE

IC = 1 mA
f = 10.7 MHz

= 25°C

T

a

Collector-emitter voltage VCE (V)