Panasonic 2SC0829 Service Manual

Transistors

2SC0829 (2SC829)

Silicon NPN epitaxial planar type

For high-frequency amplification

5.0

±0.2

Unit: mm

4.0

±0.2

■ Features

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.2

5.1

±0.5

12.9

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

TO-92-B1 Package

• Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

30 V

20 V

5V

30 mA

400 mW

150 °C

−55 to +150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Forward current transfer ratio

*

CBOIC

CEOIC

EBOIE

h

FE

Transition frequency f

Reverse transfer capacitance C

(Common emitter)

Reverse transfer impedance Z

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank B C

h

FE

70 to 160 110 to 250

= 10 µA, IE = 030V

= 2 mA, IB = 020V

= 10 µA, IC = 05V

VCE = 10 V, IC = 1 mA 70 250 

VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230 MHz

T

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.3 1.6 pF

re

VCB = 10 V, IE = −1 mA, f = 2 MHz 60 Ω

rb

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2003 SJC00098CED

1

2SC0829

PC  T

500

400

(mW)

C

300

200

100

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

IB  V

120

100

80

(µA)

B

60

40

Base current I

20

a

BE

VCE = 10 V

= 25°C

T

a

IC  V

12

IB = 100 µA

10

8

(mA)

C

6

4

Collector current I

2

0

0 4 8 12 16

Collector-emitter voltage VCE (V)

V

 I

CE(sat)

(V)

CE(sat)

100

10

1

0.1

25°C

CE

80 µA

60 µA

Ta = 25°C

40 µA

20 µA

C

IC / IB = 10

Ta = 75°C

−25°C

IC  V

60

50

40

(mA)

C

30

20

Ta = 75°C

BE

25°C

−25°C

Collector current I

10

0

02.01.60.4 1.20.8

Base-emitter voltage VBE (V)

hFE  I

300

250

FE

200

150

100

Forward current transfer ratio h

50

C

Ta = 75°C

25°C

−25°C

VCE = 10 V

VCE = 10 V

0

0 1.20.4 0.8 1.6

Base-emitter voltage VBE (V)

fT  I

600

500

(MHz)

400

T

300

200

Transition frequency f

100

0

− 0.1 −1 −10 −100

E

VCB = 10 V

6 V

Emitter current IE (mA)

2

Ta = 25°C

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA)

Zrb  I

80

70

(Ω)

rb

60

50

40

30

20

Reverse transfer impedance Z

10

0

− 0.1 −1 −10

E

f = 2 MHz

= 25°C

T

a

VCB = 6 V

Emitter current IE (mA)

SJC00098CED

10 V

0

0.1 1 10 100

Collector current IC (mA)

Cre  V

2.4

2.0

(pF)

re

C

1.6

1.2

0.8

0.4

(Common emitter)

Reverse transfer capacitance

0

0.1 1 10 100

CE

Collector-emitter voltage VCE (V)

IC = 1 mA
f = 10.7 MHz

= 25°C

T

a