Panasonic 2SB970 User Manual

2SB0970

Transistor

2SB970

Silicon PNP epitaxial planer type

For low-voltage output amplification

■ Features

●Low collector to emitter saturation voltage VCE(sat).

●Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol		Ratings	Unit
Collector to base voltage	VCBO		–15	V
Collector to emitter voltage	VCEO		–10	V
Emitter to base voltage	VEBO		–7	V
Peak collector current	ICP		–1	A
Collector current	IC		– 0.5	A
Collector power dissipation	PC		200	mW
Junction temperature	Tj		150	˚C
Storage temperature	Tstg		–55 ~ +150	˚C
■ Electrical Characteristics		(Ta=25˚C)

Unit: mm

	+0.2
	2.8 –0.3
0.65±0.15	+0.25	0.65±0.15
	1.5 –0.05

–0.052.9+0.2	0.21.9±							1						1.45								+0.1	–0.05
					0.950.95
											3												0.4
								2
																						+0.1	0.16 –0.06
	+0.2	1.1 –0.1
					0.8
		0.1 to 0.3														0.1
				0.4±0.2
																	0 to

1:Base	JEDEC:TO–236
2:Emitter	EIAJ:SC–59
3:Collector	Mini Type Package

Marking symbol : 1R

Parameter	Symbol					Conditions	min	typ	max	Unit
Collector cutoff current	I			V		= –10V, I = 0			–100	nA
	CBO				CB	E
Collector to base voltage	VCBO			IC = –10A, IE = 0			–15			V
Collector to emitter voltage	V			I = –1mA, I = 0			–10			V
		CEO		C		B
Emitter to base voltage	VEBO			IE = –10A, IC = 0			–7			V
	h		*1	V		*2	130		350
						= –2V, I = –0.5A
Forward current transfer ratio	FE1				CE	C
	h			V		*2	60
						= –2V, I = –1A
	FE2				CE	C
Collector to emitter saturation voltage	V			I = –0.4A, I = –8mA				– 0.16	– 0.3	V
		CE(sat)		C		B
Base to emitter saturation voltage	V			I = –0.4A, I = –8mA				– 0.8	–1.2	V
		BE(sat)		C		B
Transition frequency	f			V	CB	= –10V, I = 50mA, f = 200MHz		130		MHz
	T					E
Collector output capacitance	C	ob		V		= –10V, I = 0, f = 1MHz		22		pF
					CB	E

*2 Pulse measurement

*1hFE1 Rank classification

Rank	R	S
hFE1	130 ~ 220	180 ~	350
Marking Symbol	1RR	1RS

1

Transistor

2SB970

PC — Ta

I

C — V

CE

VBE(sat) — I

C

240

–1.2

Ta=25˚C

(V)

–100

IC/IB=50

(mW)

200

–1.0

IB=–10mA

BE(sat)

–30

(A)

–9mA

C

V

–10

P

–8mA

Base to emitter saturation voltage

Collector power dissipation

160

C– 0.8

–7mA

Collector current I

–6mA

–3

25˚C

120

– 0.6

–5mA

–1

Ta=–25˚C

–4mA

75˚C

80

– 0.4

–3mA

– 0.3

–2mA

– 0.1

40

– 0.2

–1mA

– 0.03

0

0

– 0.01

0

20 40 60 80 100

120

140

160

0

–1

–2

–3

–4

–5

–6

– 0.01

– 0.03

– 0.1 – 0.3

–1

–3

–10

Ambient temperature

Ta

(˚C)

Collector to emitter voltage

VCE

(V)

Collector current

IC

(A)

VCE(sat) — I

C

hFE — I

C

fT — I

E

(V)

–100

IC/IB=50

600

V

=–2V

200

VCB=–10V

CE

Ta=25˚C

CE(sat)

180

–30

FE

500

(MHz)

160

V

h

–10

140

Collector to emitter saturation voltage

Forward current transferratio

400

T

Ta=75˚C

Transition frequency f

–3

120

–1

300

25˚C

100

– 0.3

–25˚C

80

Ta=75˚C

200

60

25˚C

– 0.1

100

40

–25˚C

– 0.03

20

– 0.01

0

0

– 0.01

– 0.03

– 0.1 – 0.3

–1

–3

–10

– 0.01

– 0.03

– 0.1

– 0.3

–1

–3

–10

1

3

10

30

100

Collector current

IC

(A)

Collector current

IC

(A)

Emitter current

IE

(mA)

Cob — V

CB

80

(pF)

70

IE=0

f=1MHz

ob

Ta=25˚C

C

60

capacitance

50

40

output

30

20

Collector

10

0

–1

–3

–10

–30

–100

Collector to base voltage

VCB

(V)

2