Panasonic 2SB950, 2SB950A User Manual

10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5 Solder Dip
4.0
0.5
+0.2 –0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5 213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
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Po wer Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1276 and 2SD1276A
Features
High foward current transfer ratio h
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage
2SB950 2SB950A 2SB950
2SB950A Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Electrical Characteristics (T
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency Turn-on time Storage time Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
2000 to 5000
Symbol
2SB950 2SB950A 2SB950 2SB950A
2SB950 2SB950A
4000 to 10000
V
V
V I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)1
V
CE(sat)2
f
T
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
–60 –80 –60 –80
–5 –8 –4 40
2
150
–55 to +150
=25˚C)
Unit
V
V
V A A
W
˚C ˚C
Conditions
VCB = –60V, IE = 0 VCB = –80V, IE = 0 VCE = –30V, IB = 0 VCE = –40V, IB = 0 VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –3V, IC = – 0.5A VCE = –3V, IC = –3A VCE = –3V, IC = –3A IC = –3A, IB = –12mA IC = –5A, IB = –20mA VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –3A, IB1 = –12mA, IB2 = 12mA, VCC = –50V
TO–220 Full Pack Package(a)
Internal Connection
B
min
–60
–80 1000 2000
typ
20
0.3
0.5
Unit: mm
1:Base 2:Collector 3:Emitter
C
E
max
–200 –200 –500 –500
Unit
µA
µA
–2
mA
V
10000
–2.5
–2 –4
V V V
MHz
µs
2
µs µs
1
Po wer Transistors 2SB950, 2SB950A
PC—Ta IC—V
50
) W
(
40
C
30
20
10
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
V
CE(sat)—IC
IC/IB=250
TC=100˚C
25˚C
– 0.1 –1 –10
– 0.3 –3
Collector current IC (A
)
–25˚C
)
CE
–6
–5
) A
(
–4
C
–3
–2
TC=25˚C
IB=–3.0mA
–2.5mA
–2.0mA
–1.5mA
Collector current I
–1
0
0–5–4–1 –3–2
Collector to emitter voltage VCE (V
hFE—I
C
6
10
FE
5
10
4
10
3
10
VCE=–3V
TC=100˚C
–25˚C
Forward current transfer ratio h
2
10
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
–1.0mA – 0.5mA
– 0.4mA
– 0.3mA – 0.2mA
25˚C
)
IC—V
–10
–8
) A
(
C
Collector current I
)
–6
–4
–2
0
0 –3.2– 0.8 –2.4–1.6
TC=100˚C –25˚C
Base to emitter voltage VBE (V
Cob—V
10000
) pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
BE
25˚C
CB
VCE=–3V
IE=0 f=1MHz T
=25˚C
C
)
)
Area of safe operation (ASO) R
–100
–30
)
I
CP
–10
A
(
C
I
–3
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
DC
2SB950A
2SB950
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
( (t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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