Panasonic 2SB942, 2SB942A User Manual

2SB942

Power Transistors

2SB942, 2SB942A

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SD1267 and 2SD1267A

■ Features

●High forward current transfer ratio hFE which has satisfactory linearity

●Low collector to emitter saturation voltage VCE(sat)

●Full-pack package which can be installed to the heat sink with one screw

■ Absolute Maximum Ratings (TC=25˚C)

	Parameter		Symbol	Ratings	Unit
	Collector to	2SB942	VCBO	–60	V
	base voltage	2SB942A		–80
	Collector to	2SB942	VCEO	–60	V
	emitter voltage	2SB942A		–80
	Emitter to base voltage		VEBO	–5	V
	Peak collector current		ICP	–8	A
	Collector current		IC	–4	A
	Collector power	TC=25°C	PC	40	W
	dissipation	Ta=25°C		2
	Junction temperature		Tj	150	˚C
	Storage temperature		Tstg	–55 to +150	˚C

		±0.1
		0.7
		±0.2
±0.3		7.5
16.7
		4.0
14.0±0.5
		Solder Dip

Unit: mm

10.0±0.2

4.2±0.2

5.5±0.2

2.7±0.2

±0.2

4.2

φ3.1±0.1

1.4±0.1

0.8±0.1

2.54±0.25

5.08±0.5

1 2 3

1.3±0.2

0.5 –0+0..12

1:Base

2:Collector

3:Emitter TO–220 Full Pack Package(a)

■ Electrical Characteristics

(TC=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff

2SB942

V

= –60V, V

= 0

–400

ICES

CE

BE

A

current

2SB942A

V

= –80V, V

= 0

–400

CE

BE

Collector cutoff

2SB942

V

= –30V, I = 0

–700

ICEO

CE

B

A

current

2SB942A

V

= –60V, I = 0

–700

CE

B

Emitter cutoff current

I

V

= –5V, I = 0

–1

mA

EBO

EB

C

Collector to emitter

2SB942

V

I = –30mA, I = 0

–60

V

voltage

2SB942A

CEO

C

B

–80

h

*

V

= –4V, I = –1A

70

250

Forward current transfer ratio

FE1

CE

C

h

V

= –4V, I = –3A

15

FE2

CE

C

Base to emitter voltage

V

V

= –4V, I = –3A

–2

V

BE

CE

C

Collector to emitter saturation voltage

V

I = –4A, I = – 0.4A

–1.5

V

CE(sat)

C

B

Transition frequency

f

V

= –10V, I = – 0.1A, f = 10MHz

30

MHz

T

CE

C

Turn-on time

ton

0.2

s

Storage time

tstg

IC = –4A,B1I = – 0.4A,B2I = 0.4A

0.5

s

Fall time

tf

0.2

s

*hFE1 Rank classification

Rank

Q

P

Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the

hFE1

70 to 150

120 to 250

rank classification.

1

Power Transistors

2SB942, 2SB942A

PC — Ta

I C — V CE

IC — V BE

50

–6

TC=25˚C

–10

(W)

(1) TC=Ta

IB=–120mA

VCE=–4V

(2) With a 100 × 100 × 2mm

Al heat sink

–5

–100mA

C

40

(3) With a 50 × 50 × 2mm

(A)

(A)

–8

P

Al heat sink

–80mA

Collector power dissipation

(4) Without heat sink

C

–4

C

(PC=2W)

–60mA

25˚C

30

Collector current I

Collector current I

–6

TC=100˚C

–25˚C

(1)

–3

–40mA

20

–4

–2

–20mA

–10mA

10

(2)

–1

–8mA

–2

(3)

–5mA

(4)

0

0

0

0

20

40

60

80

100 120

140

160

0

–2

–4

–6

–8

–10

–12

0

– 0.4

– 0.8

–1.2

–1.6

–2.0

Ambient temperature

Ta

(˚C)

Collector to emitter voltage

VCE

(V)

Base to emitter voltage

VBE

(V)

VCE(sat) — I

C

hFE — I

C

fT — I

C

(V)

–100

IC/IB=10

10000

VCE=–4V

10000

VCE=–5V

CE(sat)

–30

FE

3000

3000

f=10MHz

(MHz)

TC=25˚C

V

–10

h

1000

1000

Collector to emitter saturation voltage

Forward current transferratio

25˚C

T

–3

300

Transition frequency f

300

TC=100˚C

–1

100

–25˚C

100

– 0.3

25˚C

30

30

– 0.1

TC=100˚C

10

10

– 0.03

–25˚C

3

3

– 0.01

1

1

– 0.01

– 0.03

– 0.1

– 0.3

–1

–3

–10

– 0.01

– 0.03

– 0.1

– 0.3

–1

–3

–10

– 0.01

– 0.03

– 0.1 – 0.3

–1

–3

–10

Collector current

IC

(A)

Collector current

IC

(A)

Collector current

IC

(A)

Area of safe operation (ASO)

Rth(t) — t

–100

Non repetitive pulse

103

(1) Without heat sink

(2) With a 100 × 100 × 2mm Al heat sink

TC=25˚C

(˚C/W)

(A)

–30

ICP

102

(1)

–10

C

t=1ms

(t)

I

–3

IC

th

(2)

resistanceThermalR

10

currentCollector

2SB942

2SB942A

–1

10ms

DC

– 0.3

1

– 0.1

10–1

– 0.03

– 0.01

10–2

–1

–3

–10

–30

–100

–300

–1000

10–4

10–3

10–2

10–1

1

10

102

103

104

Collector to emitter voltage

VCE

(V)

Time

t

(s)

2