Panasonic 2SB792, 2SB792A Technical data

2SB0792A

Transistor

2SB792, 2SB792A

Silicon PNP epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SD814

■ Features

●High collector to emitter voltage VCEO.

●Low noise voltage NV.

●Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

■ Absolute Maximum Ratings (Ta=25˚C)

	Parameter		Symbol	Ratings	Unit
	Collector to	2SB792	VCBO	–150	V
	base voltage	2SB792A		–185
	Collector to	2SB792	VCEO	–150	V
	emitter voltage	2SB792A		–185
	Emitter to base voltage		VEBO	–5	V
	Peak collector current		ICP	–100	mA
	Collector current		IC	–50	mA
	Collector power dissipation		PC	200	mW
	Junction temperature		Tj	150	˚C
	Storage temperature		Tstg	–55 ~ +150	˚C

■ Electrical Characteristics (Ta=25˚C)

Unit: mm

	+0.2
	2.8 –0.3
0.65±0.15	+0.25	0.65±0.15
	1.5 –0.05

–0.052.9+0.2	0.21.9±							1						1.45								+0.1	–0.05
					0.950.95
											3												0.4
								2
																						+0.1	0.16 –0.06
	+0.2	1.1 –0.1
					0.8
		0.1 to 0.3														0.1
				0.4±0.2
																	0 to

1:Base	JEDEC:TO–236
2:Emitter	EIAJ:SC–59
3:Collector	Mini Type Package

Marking symbol : I(2SB792)

2F(2SB792A)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = –100V,EI = 0

–1

µA

Collector to emitter

2SB792

VCEO

IC = –100µA, IB = 0

–150

V

voltage

2SB792A

–185

Emitter to base voltage

VEBO

IE = –10µA, IC = 0

–5

V

Forward current

2SB792

h

*

V = –5V, I = –10mA

130

450

transfer ratio

2SB792A

FE

CE

C

130

330

Collector to emitter saturation voltage

VCE(sat)

IC = –30µA, IB = –3mA

–1

V

Transition frequency

f

V

CB

= –10V, I = 10mA, f = 200MHz

200

MHz

T

E

Collector output capacitance

C

ob

V

= –10V, I = 0, f = 1MHz

4

pF

CB

E

V = –10V, I = –1mA, G = 80dB,

Noise voltage

NV

CE

C

V

150

mV

Rg = 100kΩ, Function = FLAT

*hFE Rank classification

	Rank		R	S	T
	hFE		130 ~ 220	185 ~ 330	260 ~ 450
Marking		2SB792	IR	IS	IT
Symbol
		2SB792A	2FR	2FS	—

1

Transistor

2SB792, SB792A

PC — Ta

I C — V CE

IC — V BE

240

–100

–120

VCE=–5V

(mW)

Ta=25˚C

–90

I

=–10mA

25˚C

200

–80

B

–9mA

–100

C

(mA)

–8mA

(mA)

Ta=75˚C

–25˚C

–7mA

P

–70

–6mA

Collector power dissipation

160

–5mA

–80

C

C

Collector current I

–60

–4mA

Collector current I

120

–50

–3mA

–60

–40

80

–30

–2mA

–40

40

–20

–1mA

–20

–10

0

0

0

0

20 40 60 80 100

120

140

160

0

–2

–4

–6

–8

–10

–12

0

– 0.4

– 0.8

–1.2

–1.6

–2.0

Ambient temperature

Ta

(˚C)

Collector to emitter voltage

VCE

(V)

Base to emitter voltage

VBE

(V)

VCE(sat) — I

C

hFE — I

C

fT — I

E

(V)

–100

IC/IB=10

600

V

=–5V

250

VCB=–10V

CE

Ta=25˚C

CE(sat)

225

–30

FE

500

(MHz)

200

V

h

–10

175

Collector to emitter saturation voltage

Forward current transferratio

400

T

Transition frequency f

–3

Ta=75˚C

150

–1

300

25˚C

125

Ta=75˚C

– 0.3

25˚C

100

200

–25˚C

75

–25˚C

– 0.1

100

50

– 0.03

25

– 0.01

0

0

– 0.1

– 0.3

–1

–3

–10

–30

–100

–0.1

–0.3

–1

–3

–10

–30

–100

0.1

0.3

1

3

10

30

100

Collector current

IC

(mA)

Collector current

IC

(mA)

Emitter current

IE

(mA)

Cob — V

CB

10

(pF)

9

IE=0

f=1MHz

Ta=25˚C

ob

8

C

capacitance

7

6

5

4

output

3

Collector

2

1

0

–1

–3

–10

–30

–100

Collector to base voltage

VCB

(V)

2