Panasonic 2SB1722G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB1722G

Silicon PNP epitaxial planar type

For high breakdown voltage low-frequency amplification

■ Features

• High collector-emitter voltage (Base open) V

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

CEO

■ Package

• Code
SSMini3-F3

• Marking Symbol: 4R

• Pin Name

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +125 °C

stg

−100 V

−100 V

−5V

−20 mA

−50 mA

125 mW

125 °C

1. Base

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cut-off current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE

CE(sat)IC

T

= −10 µA, IE = 0 −100 V

= −1 mA, IB = 0 −100 V

= −10 µA, IC = 0 −5V

VCB = −50 V, IE = 0 −100 nA

VCE = −50 V, IB = 0 −1 µA

VCE = −10 V, IC = −2 mA 200 700 

= −10 mA, IB = −1 mA − 0.3 V

VCB = −5 V, IE = 2 mA, f = 200 MHz 200 MHz

Publication date: May 2007 SJC00389AED

1

2SB1722G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

150

125

(mW)

C

100

75

50

25

Collector power dissipation P

0

0 1507525 12550 100

a

Ambient temperature Ta (°C)

V

 I

−1

(V)

CE(sat)

− 0.1

Collector-emitter saturation voltage V

− 0.01

− 0.01 − 0.1 −1 −10 −100

CE(sat)

IC/IB = 10

Ta = 85°C

25°C

C

−25°C

Collector current IC (mA)

IC  V

−35

T

= 25°C

a

−30

−25

(mA)

C

−20

−15

−10

Collector current I

−5

0

0 −12−10−8−2 −6−4

CE

IB = −5.0 mA

Collector-emitter voltage VCE (V)

hFE  I

500

450

FE

400

350

300

250

200

150

100

Forward current transfer ratio h

Ta = 85°C

25°C

−25°C

50

0

−1 −10 −100

C

VCE = −10 V

Collector current IC (mA)

−4.5 mA

−4.0 mA

−3.5 mA

−3.0 mA

−2.5 mA

−2.0 mA

−1.5 mA

−1.0 mA

− 0.5 mA

IC  V

−50
= −10 V

V

CE

−45

−40

)
A

−35

(m

C

−30

−25

−20

−15

Collector current I

−10

−5

0

0 − 0.2 − 0.4 − 0.6 − 0.8 −1

BE

Ta = 85°C

25°C

Base-emitter voltage VBE (V

Cob  V

100

(pF)

ob

C

10

1

Collector output capacitance

(Common base, input open circuited)

0.1

0 −20 −30−10 −40

CB

f = 1 MHz
T

a

Collector-base voltage VCB (V)

−25°C

)

= 25°C

2

SJC00389AED