Panasonic 2SB1679G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB1679G

Silicon PNP epitaxial planar type

For low-frequency amplification

■ Features

• Large collector output capacitance (Common base, input open cir­cuited) C

• Low collector-emitter saturation voltage V

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

ob

CE(sat)

■ Package

• Code
SMini3-F2

• Marking Symbol: 3V

• Pin Name

1. Base

2. Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−15 V

−10 V

−7V

− 0.5 A

−1A

150 mW

150 °C

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

1

Forward current transfer ratio

*

Collector-emitter saturation voltage

1

Base-emitter saturation voltage

*

Transition frequency f

Collector output capacitance C

1

*

CBOIC

CEOIC

EBOIE

I

CBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank R S

h

FE1

130 to 220 180 to 350

= −10 µA, IE = 0 −15 V

= −1 mA, IB = 0 −10 V

= −10 µA, IC = 0 −7V

VCB = −10 V, IE = 0 −100 nA

2

*

VCE = −2 V, IC = − 0.5 A 130 350 

VCE = −2 V, IC = −1 A 60

= − 0.4 A, IB = −8 mA − 0.16 − 0.30 V

= − 0.4 A, IB = −8 mA − 0.8 −1.2 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 130 MHz

VCB = −10 V, IE = 0, f = 1 MHz 22 pF

Publication date: April 2007 SJC00355AED

1

2SB1679G

0

6

0

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

a

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

016

40 12080

Ambient temperature Ta (°C

V

 I

−1

)

V

(

CE(sat)

− 0.1

Collector-emitter saturation voltage V

− 0.01

−1 −10 −100 −1 000

CE(sat)

Ta = 85°C

Collector current IC (mA

)

C

IC / IB = 50

−25°C

25°C

)

000

1

Ta = 25°C

900

800

)

700

mA

(

C

600

500

400

300

Collector current I

200

100

0

0

Collector-emitter voltage

−10

)

V

(

BE(sat)

−1

Base-emitter saturation voltage V

− 0.1

−1 −10 −100 −1 000

IC  V

CE

IB = 5.0 mA

4.5 mA

4.0 mA

3.5 mA

3.0 mA

2.5 mA

VCE (V

V

 I

BE(sat)

Ta = 85°C

C

IC / IB = 50

−25°C

25°C

Collector current IC (mA

2.0 mA

1.5 mA

1.0 mA

0.5 mA

541 32

)

IC  V

hFE  I

Ta = 85°C

25°C

−25°C

BE

VCE = −2 V

25°C

−25°C

−1.4−1.0 −1.2− 0.8− 0.2 − 0.6− 0.4

)

C

VCE = −2 V

)

−100

−90

−80

)

−70

mA
(

Collector current I

)

FE

Forward current transfer ratio h

Ta = 85°C

C

−60

−50

−40

−30

−20

−10

0

0

Base-emitter voltage VBE (V

450

400

350

300

250

200

150

100

50

0

−1 −100−10 −1 00

Collector current IC (mA

2

SJC00355AED