Panasonic 2SB1679 Datasheet
Transistors
2SB1679
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
+0.1
0.3
–0.0
(0.425)
0.15
+0.10
–0.05
■ Features
• Large current capacitance
• Low collector to emitter saturation voltage
Small type package, allowing downsizing and thinning of the
•
equipment.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
C
j
stg
−15 V
−10 V
−7V
− 0.5 A
−1A
150 mW
150 °C
−55 to +150 °C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
1
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
*
1
*
1
*
Transition frequency f
Collector output capacitance C
Note)*1: Pulse measurement
2: Rank classification
*
Rank R S
h
FE1
130 to 220 180 to 350
V
V
CBO
CBO
CEO
EBO
h
FE1
h
FE2
CE(sat)
BE(sat)
T
ob
VCB = −10 V, IE = 0 −100 nA
IC = −10 µA, IE = 0 −15 V
IC = −1 mA, IB = 0 −10 V
IE = −10 µA, IC = 0 −7V
2
*
VCE = −2 V, IC = − 0.5 A 130 350
VCE = −2 V, IC = −1 A 60
IC = − 0.4 A, IB = −8 mA − 0.16 − 0.3 V
IC = − 0.4 A, IB = −8 mA − 0.8 −1.2 V
VCB = −10 V, IE = 50 mA, f = 200 MHz 130 MHz
VCB = −10 V, IE = 0, f = 1 MHz 22 pF
132
(0.65)
(0.65)
1.3
±0.1
2.0
±0.2
10°
S-Mini Type Package (3-pin)
Marking Symbol: 3V
±0.10
1.25
+0.2
±0.1
0.9
0.9
0 to 0.1
±0.1
2.1
–0.1
5°
±0.1
0.2
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
1
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