Panasonic 2SB1653 Datasheet
Po wer Transistors
2SB1653
Silicon PNP triple diffusion planar type
For power switching
Features
■
●
High collector to emitter V
●
Low collector to emitter saturation voltage V
●
Allowing automatic insertion with radial taping
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
CEO
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
–55 to +150
=25˚C)
CE(sat)
=25˚C)
C
Ratings
–400
–400
–7
–1
– 0.5
1.5
150
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –400V, IE = 0
VCE = –100V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
VCE = –5V, IC = –50mA
VCE = –5V, IC = –300mA
IC = –100mA, IB = –10mA
VCE = –100mA, IB = –10mA
VCB = –10V, IE = 0.2A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –100mA,
IB1 = –10mA, IB2 = 10mA,
VCC = –150V, RL = 1.5kΩ
7.5±0.2 4.5±0.2
3.8±0.2
10.8±0.216.0±1.0
2.5±0.1
0.7±0.1
0.8C
123
min
–400
80
10
0.85±0.10.65±0.1
1.0±0.1
0.7±0.1
0.5±0.1
2.5±0.22.5±0.2
typ
– 0.25
– 0.8
20
25
1.0
0.8
1.0
Unit: mm
90°
–1
–1
–1
0.8C
1:Emitter
2:Collector
3:Base
Unit
µA
µA
mA
0.8C
0.4±0.1
2.05±0.2
MT3 Type Package
max
V
280
– 0.5
–1.2
V
V
MHz
50
pF
µs
µs
µs
*
h
Rank classification
FE1
Rank P Q
h
FE1
80 to 160 130 to 280
1
Po wer Transistors 2SB1653
PC—Ta IC—V
2.0
)
W
(
1.6
C
1.2
0.8
0.4
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
240
FE
200
Ta=75˚C
160
120
25˚C
–25˚C
Without heat sink
hFE—I
C
VCE=–5V
CE
)
–480
–400
)
mA
(
–320
C
–240
–160
Collector current I
–80
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
–7mA
–6mA
Cob—V
60
)
pF
(
50
ob
40
30
–8mA
CB
–9mA
Ta=25˚C
IB=–10mA
–5mA
–4mA
–3mA
–2mA
–1mA
IE=0
f=1MHz
T
=25˚C
C
–10
V
(
CE(sat)
–1
– 0.1
– 0.01
– 0.001
Collector to emitter saturation voltage V
)
V
CE(sat)—IC
IC/IB=10
Ta=75˚C
–25˚C
–1 –10 –100 –1000
25˚C
Collector current IC (mA
)
80
40
Forward current transfer ratio h
0
–1 –10 –100 –1000
Collector current IC (mA
20
10
Collector output capacitance C
0
–1 –10 –100
)
Collector to base voltage VCB (V
)
2
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