Panasonic 2SB1645 Datasheet
Power Transistors
2SB1645
Silicon PNP triple diffusion planar type Darlington
For power amplification
■ Features
• Satisfactory forward current transfer ratio hFE characteristics
• Wide area of safe operation (ASO)
• Optimum for the output stage of a HiFi audio amplifier
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power
dissipation
TC = 25°CPC100 W
Ta = 25°C3
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
j
stg
−160 V
−160 V
−5V
−15 A
−8A
150 °C
−55 to +150 °C
±0.5
26.5
(2.0)
(2.0)
±0.5
18.6
±0.3
3.3
Internal Connection
15.5
(10.0)
(1.2)
Solder Dip
10.9
15°23
B
±0.5
±0.5
φ 3.2
±0.1
(4.5)
(4.0)
±0.2
2.0
1.1
±0.1
5.45
±0.3
±0.3
5.5
(2.0)
TOP-3E Package
5°
5°
C
Unit: mm
3.0
±0.3
5°
(23.4)
±0.5
22.0
5°
5°
0.7
±0.1
1: Base
2: Collector
3: Emitter
■ Electrical Characteristics TC = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Collector to emitter voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Turn-on time t
Storage time t
Fall time t
Note)*: Rank classification
Rank P Q
h
FE2
5 000 to 15 000 3 500 to 10 000
CBO
I
CEO
EBO
CEO
FE1
h
*VCE = −5 V, IC = −7 A 3 500 15 000
FE2
CE(sat)IC
BE(sat)IC
T
on
stg
f
E
VCB = −160 V, IE = 0 −100 µA
VCB = −160 V, IE = 0 −100 µA
VEB = −5 V, IC = 0 −100 µA
IC = −10 mA, IB = 0 −160 V
VCE = −5 V, IC = −1 A 500
= −7 A, IB = −7 mA −3V
= −7 A, IB = −7 mA −3V
VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz
IC = 7 A, IB1 = −7 mA, IB2 = 7 mA 1.0 µs
VCC = −50 V 1.5 µs
1.2 µs
1
2SB1645 Power Transistors
PC T
a
120
)
100
W
(
C
80
60
40
20
Collector power dissipation P
0
(1) T
= T
C
a
(2) With a 100 × 100 × 2 mm
(1)
(2)
(3)
0 20 40 60 80 100 120 140 160
Al heat sink
(3) Without heat sink
Ambient temperature Ta (°C
Area of safe operation (ASO)
−100
3
)
A
(
−10
C
− 0.1
I
CP
I
C
−1
Collector current I
− 0.01
− 0.001
)
−1
Collector to emitter voltage VCE (V
Non repetitive pulse
= 25°C
T
C
t = 1 ms
t = 10 ms
t = 1 s
max.
CEO
V
−10 −100 −1 000
)
2
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