Panasonic 2SB1638 Datasheet
Po wer Transistors
2SB1638, 2SB1638A
Silicon PNP epitaxial planar type
For low-voltage switching
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB1638
2SB1638A
2SB1638
2SB1638A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
2SB1638
2SB1638A
2SB1638
2SB1638A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
CE(sat)
FE
=25˚C)
C
Ratings
–40
–50
–20
–40
–5
–12
–7
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –5A, IB = – 0.16A
IC = –5A, IB = – 0.16A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
10.2±0.3
7.2±0.3
+0.3
–0.
10.0
7.2±0.3
7.0±0.3
3.0±0.2
0.8±0.21.0±0.2
4.6±0.4
7.0±0.3
1.1±0.1
123
4.6±0.4
min
–20
–40
45
90
1.1±0.1
0.75±0.1
2.3±0.2
213
2.0±0.2
3.0±0.2
0.75±0.1
2.3±0.2
1.0 max.
typ
150
140
0.1
0.5
0.1
Unit: mm
3.5±0.2
0.85±0.1
0.4±0.1
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.01.0
2.5
0.9±0.1
0.5 max.
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
max
–50
–50
–50
Unit
µA
µA
V
260
– 0.6
–1.5
V
V
MHz
pF
µs
µs
µs
2.5±0.2
2.5±0.2
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
1
Po wer Transistors 2SB1638, 2SB1638A
PC—Ta IC—V
20
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–10
)
V
(
–3
BE(sat)
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
(1) TC=Ta
(2) Without heat sink
(2)
V
BE(sat)—IC
TC=–25˚C
100˚C
25˚C
(P
(1)
=1.3W)
C
IC/IB=30
)
CE
)
–6
–5
)
A
(
–4
C
–3
–2
IB=–60mA
Collector current I
–1
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
TC=100˚C
300
100
–25˚C
30
10
Forward current transfer ratio h
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
25˚C
–50mA
C
TC=25˚C
–45mA
–40mA
–35mA
VCE=–2V
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
fT—I
C
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=30
TC=100˚C
25˚C
–25˚C
VCE=–10V
f=10MHz
T
=25˚C
C
)
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
–10
)
–3
µs
(
f
,t
–1
stg
,t
on
– 0.3
– 0.1
Switching time t
– 0.03
– 0.01
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
, tf — I
stg
t
stg
t
on
t
f
C
Pulsed tw=1ms
Duty cycle=1%
=30
I
C/IB
)
(–I
B1=IB2
V
=–20V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
I
CP
)
–10
A
(
I
C
C
–3
300ms
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
2SB1638A
2SB1638
)
Loading...