Panasonic 2SB1623 Datasheet

Power Transistors

2SB1623

Silicon PNP epitaxial planer type

For power amplification

■ Features

• High forward current transfer ratio h

• Satisfactory linearity of forward current transfer ratio h

• Dielectric breakdown voltage of the package: > 5 kV

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I

Collector power
dissipation

Junction temperature T
Storage temperature T

TC = 25°CPC40 W
Ta = 25°C 2.0

FE

CBO

CEO

EBO

CP

C

j

−55 to +150 °C

stg

−60 V

−60 V

−5V

−8A

−4A

150 °C

Unit: mm

4.6

9.9

±0.3

±0.5

3.0

φ 3.2

0.8

2.54

5.08

±0.1

1.4

±0.2

1.6

±0.2

±0.1

±0.30

±0.50

±0.5

FE

15.0

±0.2

13.7

±0.2

4.2

Solder Dip

123

±0.2

2.9

±0.2

2.6

±0.1

0.55

±0.15

1: Base
2: Collector
3: Emitter

TO-220D Package

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Emitter cutoff current I
Collector to emitter voltage V
Forward current transfer ratio h

Base to emitter voltage (DC value) V
Collector to emitter saturation voltage V

Transition frequency f
Turn-on time t
Storage time t
Fall time t

Note)*: Rank classification

Rank P Q R

h

FE2

4 000 to 10 000 2 000 to 5 000 1 000 to 2 500

CBO

I

CEO

EBO

CEO

FE1

h

*VCE = −3 V, IC = −3 A 1 000 10 000

FE2

BE

CE(sat)1IC

V

CE(sat)2IC

T

on

stg

f

VCB = −60 V, VBE = 0 −200 µA
VCB = −30 V, IB = 0 −500 µA
VEB = −5 V, IC = 0 −2mA
IC = −30 mA, IB = 0 −60 V
VCE = −3 V, IC = − 0.5 A 1 000

VCE = −3 V, IC = −3 A −2.5 V

= −3 A, IB = −12 mA −2V

= −5 A, IB = −20 mA −4V
VCB = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA 0.3 µs
VCC = −50 V 2 µs

0.5 µs

1