Panasonic 2SB1623 Datasheet
Power Transistors
2SB1623
Silicon PNP epitaxial planer type
For power amplification
■ Features
• High forward current transfer ratio h
• Satisfactory linearity of forward current transfer ratio h
• Dielectric breakdown voltage of the package: > 5 kV
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power
dissipation
Junction temperature T
Storage temperature T
TC = 25°CPC40 W
Ta = 25°C 2.0
FE
CBO
CEO
EBO
CP
C
j
−55 to +150 °C
stg
−60 V
−60 V
−5V
−8A
−4A
150 °C
Unit: mm
4.6
9.9
±0.3
±0.5
3.0
φ 3.2
0.8
2.54
5.08
±0.1
1.4
±0.2
1.6
±0.2
±0.1
±0.30
±0.50
±0.5
FE
15.0
±0.2
13.7
±0.2
4.2
Solder Dip
123
±0.2
2.9
±0.2
2.6
±0.1
0.55
±0.15
1: Base
2: Collector
3: Emitter
TO-220D Package
■ Electrical Characteristics TC = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Collector to emitter voltage V
Forward current transfer ratio h
Base to emitter voltage (DC value) V
Collector to emitter saturation voltage V
Transition frequency f
Turn-on time t
Storage time t
Fall time t
Note)*: Rank classification
Rank P Q R
h
FE2
4 000 to 10 000 2 000 to 5 000 1 000 to 2 500
CBO
I
CEO
EBO
CEO
FE1
h
*VCE = −3 V, IC = −3 A 1 000 10 000
FE2
BE
CE(sat)1IC
V
CE(sat)2IC
T
on
stg
f
VCB = −60 V, VBE = 0 −200 µA
VCB = −30 V, IB = 0 −500 µA
VEB = −5 V, IC = 0 −2mA
IC = −30 mA, IB = 0 −60 V
VCE = −3 V, IC = − 0.5 A 1 000
VCE = −3 V, IC = −3 A −2.5 V
= −3 A, IB = −12 mA −2V
= −5 A, IB = −20 mA −4V
VCB = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA 0.3 µs
VCC = −50 V 2 µs
0.5 µs
1
Loading...