Panasonic 2SB1612 Datasheet
Transistor
2SB1612
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2474
Features
■
●
Low collector to emitter saturation voltage V
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
–10
–10
–7
–2.4
–2
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : 2F
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
VCB = –7V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = 200mA
IC = –1A, IB = –10mA
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –6V, IE = 0, f = 1MHz
min
–10
–10
–7
200
typ
– 0.19
60
100
max
–1
800
– 0.25
Unit
µA
V
V
V
V
MHz
pF
1
Transistor 2SB1612
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
CE(sat)
25˚C
– 0.1 –1 –10
– 0.03
C
IC/IB=100
Ta=75˚C
–25˚C
– 0.3 –3
Collector current IC (A
)
)
CE
–1.2
–1.0
)
A
(
– 0.8
C
– 0.6
– 0.4
IB=–3.0mA
Collector current I
– 0.2
0
0 –2.4–2.0–1.6– 0.4 –1.2– 0.8
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
– 0.01
Ta=75˚C
25˚C
–25˚C
0
– 0.1 –1 –10
– 0.03
VCE=–2V
– 0.3 –3
Collector current IC (A
Ta=25˚C
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
)
–3.0
–2.5
)
A
(
–2.0
C
–1.5
–1.0
Collector current I
– 0.5
0
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
)
Base to emitter voltage VBE (V
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
1 3 10 30 100
IC — V
BE
VCE=–2V
25˚C
Ta=75˚C
fT — I
E
–25˚C
VCB=–6V
f=200MHz
Ta=25˚C
Emitter current IE (mA
)
)
)
pF
(
Cob — V
240
200
ob
160
120
80
40
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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