Panasonic 2SB1606 Datasheet
Po wer Transistors
2SB1606
Silicon PNP epitaxial planar type
For power switching
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Large collector current I
●
Full-pack package with outstanding insulation, which can be in-
C
stalled to the heat sink with one screw
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
Ratings
–130
–80
–7
–10
–5
40
2
150
–55 to +150
FE
Unit
W
˚C
˚C
Unit: mm
4.6±0.2
15.0±0.313.7
–0.2
8.0±0.2
4.1±0.2
Solder Dip
7°
9.9±0.3
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
231
φ3.2±0.1
+0.5
V
V
V
A
A
TO–220E Full Pack Package
2.9±0.2
2.6±0.1
0.7±0.1
1:Base
2:Collector
3:Emitter
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Rank Q P
h
FE2
90 to 180 130 to 260
Conditions
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
*
VCE = –2V, IC = –2A
IC = –4A, IB = – 0.2A
IC = –4A, IB = – 0.2A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A
min
–80
45
90
typ
30
0.13
0.5
0.13
max
–10
–50
260
– 0.5
–1.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Po wer Transistors 2SB1606
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
V
BE(sat)—IC
25˚C
TC=–25˚C
100˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=20
)
CE
)
–8
–7
)
–6
A
(
C
–5
–4
–3
–2
Collector current I
–1
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
IB=–120mA
hFE—I
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
3
1
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
C
25˚C
T
–100mA
–80mA
–60mA
VCE=–2V
=25˚C
C
–40mA
–30mA
–20mA
–10mA
–3mA
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
TC=100˚C
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
fT—I
3
1
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
25˚C
–25˚C
– 0.3 –3
C
VCE=–10V
f=10MHz
T
=25˚C
C
– 0.3 –3
IC/IB=20
)
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
0 –3.2– 0.8 –2.4–1.6
Collector current IC (A
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=10
I
C/IB
)
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
I
)
CP
–10
A
(
C
I
C
10ms
–3
t
stg
t
on
t
f
)
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=0.5ms
DC
1ms
)
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