Panasonic 2SB1604 Datasheet
Po wer Transistors
2SB1604, 2SB1604A
Silicon PNP epitaxial planar type
For low-voltage switching
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB1604
2SB1604A
2SB1604
2SB1604A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
–40
–50
–20
–40
–5
–20
–10
40
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
φ3.2±0.1
15.0±0.313.7
–0.2
+0.5
4.1±0.2
8.0±0.2
Solder Dip
7°
9.9±0.3
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
231
TO–220E Full Pack Package
Unit: mm
4.6±0.2
2.9±0.2
2.6±0.1
0.7±0.1
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SB1604
2SB1604A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = –40V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
IC = –10A, IB = – 0.33A
IC = –10A, IB = – 0.33A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –3A, IB1 = – 0.1A, IB2 = 0.1A
min
–20
–40
45
90
typ
100
400
0.1
0.5
0.1
max
–50
–50
260
– 0.6
–1.5
Unit
µA
µA
V
V
V
MHz
pF
µs
µs
µs
1
Po wer Transistors 2SB1604, 2SB1604A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–10
)
V
(
–3
BE(sat)
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.1 –1 –10– 0.3 –3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
V
BE(sat)—IC
TC=–25˚C
100˚C
25˚C
Collector current IC (A
IC/IB=30
)
CE
–12
–10
)
A
(
–8
C
–6
–4
IB=–100mA
–80mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
–25˚C
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
TC=25˚C
–60mA
–50mA
–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
C
VCE=–2V
25˚C
)
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
TC=100˚C
25˚C
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
fT—I
C
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=30
–25˚C
)
VCE=–10V
f=10MHz
T
=25˚C
C
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
10
)
3
µs
(
f
,t
1
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
, tf — I
stg
t
on
C
Pulsed tw=1ms
Duty cycle=1%
=30
I
C/IB
(–I
B1=IB2
V
=–20V
CC
=25˚C
T
C
t
stg
t
f
Area of safe operation (ASO)
–100
–30
I
)
)
CP
)
–10
A
(
I
C
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to emitter voltage VCE (V
Non repetitive pulse
T
C
10ms
=25˚C
DC
t=1ms
2SB1604
2SB1604A
)
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