Panasonic 2SB1603 Datasheet
Po wer Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB1603
2SB1603A
2SB1603
2SB1603A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
–40
–50
–20
–40
–5
–8
–4
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
φ3.2±0.1
15.0±0.313.7
–0.2
+0.5
4.1±0.2
8.0±0.2
Solder Dip
7°
9.9±0.3
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
231
TO–220E Full Pack Package
Unit: mm
4.6±0.2
2.9±0.2
2.6±0.1
0.7±0.1
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SB1603
2SB1603A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = –40V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –1A
IC = –2A, IB = – 0.1A
IC = –2A, IB = – 0.1A
VCE = –5V, IC = – 0.5A, f = 10MHz
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A
min
–20
–40
45
90
typ
150
0.3
0.4
0.1
max
–50
–50
260
– 0.5
–1.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Po wer Transistors 2SB1603, 2SB1603A
PC—Ta IC—V
40
)
35
W
(
C
30
25
20
15
10
5
Collector power dissipation P
0
0 15012510025 7550
–100
)
V
(
–30
BE(sat)
–10
–3
–1
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=2.0W)
(P
C
(1)
(2)
(3)
Ambient temperature Ta (˚C
V
BE(sat)—IC
TC=–25˚C
25˚C
100˚C
IC/IB=20
CE
)
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
–1000
–300
FE
–100
–30
–10
IB=–80mA
–50mA
–45mA
hFE—I
TC=100˚C
25˚C
–25˚C
TC=25˚C
–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
C
VCE=–2V
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
V
CE(sat)—IC
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
fT—I
TC=100˚C
25˚C
–25˚C
– 0.3 –3
C
VCE=–2V
f=10MHz
T
C
IC/IB=20
)
=25˚C
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
10
)
3
µs
(
f
,t
1
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
ton, t
, tf—I
stg
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
C
Pulsed tw=1ms
Duty cycle=1%
=10
I
C/IB
)
(–I
B1=IB2
V
=–20V
CC
=25˚C
T
C
t
on
t
stg
t
f
)
)
–3
–1
Forward current transfer ratio h
– 0.3
– 0.1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Area of safe operation (ASO)
–100
–30
)
I
–10
CP
A
(
10ms
C
I
–3
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
Non repetitive pulse
T
t=1ms
1s
2SB1603
=25˚C
C
2SB1603A
3
1
Transition frequency f
0.3
0.1
– 0.01
)
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
)
2
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