Panasonic 2SB1599 Datasheet
Transistor
2SB1599
Silicon PNP epitaxial planer type
For power amplification
Complementary to 2SD2457
Features
■
●
Low collector to emitter saturation voltage V
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
B
*
P
C
T
j
T
stg
Ratings
–50
–40
–5
–3
– 0.6
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : 1X
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
hFE Rank classification
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank P Q R
h
FE
50 ~ 100 80 ~ 160 100 ~ 220
Conditions
VCB = –20V, IE = 0
VCE = –12V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IE = 0
IC = –10mA, IB = 0
*
VCE = –5V, IC = –1A
IC = –1.5A, IB = –0.15A
IC = –2A, IB = –0.2A
VCB = –5V, IE = 0.5A, f = 200MHz
VCB = –5V, IE = 0, f = 1MHz
min
–50
–40
50
typ
– 0.4
150
70
max
–1
–100
–100
220
–1
–1.5
Unit
µA
µA
µA
V
V
V
V
MHz
pF
1
Transistor 2SB1599
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
)
V
(
–10
BE(sat)
–3
–1
– 0.3
– 0.1
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
25˚C
Ta=–25˚C
100˚C
C
IC/IB=10
V
CE
–4.0
–3.5
)
–3.0
A
(
C
–2.5
–2.0
–1.5
–1.0
Collector current I
– 0.5
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE — I
1000
FE
300
100
30
10
IB=–40mA
C
TC=100˚C
–25˚C
TC=25˚C
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
VCE=–5V
25˚C
)
V
(
–10
CE(sat)
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01 –3–1– 0.1– 0.03 – 0.3
)
Collector current IC (A
240
)
200
MHz
(
T
160
120
80
CE(sat)
25˚C
fT — I
— I
Ta=100˚C
–25˚C
E
C
IC/IB=10
)
VCB=–5V
f=50MHz
Ta=25˚C
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01 –3–1– 0.1– 0.03 – 0.3
CB
)
IE=0
f=1MHz
Ta=25˚C
Collector current IC (A
150
)
pF
(
120
ob
90
60
30
Cob — V
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
3
Forward current transfer ratio h
1
– 0.01 –3–1– 0.1– 0.03 – 0.3
Collector current IC (A
–80
)
V
(
–70
CER
–60
–50
–40
–30
–20
–10
Collector to emitter voltage V
0
0.001 0.01 0.1 1 10
)
Base to emitter resistance RBE (kΩ
40
Transition frequency f
0
0.01 0.1 1 100.03 0.3 3
)
V
— R
CER
BE
Ta=25˚C
)
)
2SA699A
2SA699
Ta
(
Ta=25˚C
(
CEO
I
I
)
Emitter current IE (A
I
— Ta
CEO
1000
300
100
30
CEO
10
3
1
0 1201008020 6040
Ambient temperature Ta (˚C
)
VCE=–12V
)
2
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