Panasonic 2SB1592 Datasheet
Transistor
5.0±0.2
13.5±0.5
0.7±0.2
8.0±0.2
1.27
123
1.27
4.0±0.2
0.45
+0.15
–0.1
0.45
+0.15
–0.1
2.3±0.2
0.7±0.1
2.54±0.15
2SB1592
Silicon PNP epitaxial planer type
For low-frequency amplification
Features
■
●
Low collector to emitter saturation voltage V
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Applied are shot pulse of ≤1ms width
Symbol
V
CBO
V
CEO
V
EBO
*
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
Ratings
–30
–25
–11
–10
–3
1
150
–55 ~ +150
Unit: mm
.
Unit
V
V
V
A
A
W
˚C
˚C
1:Emitter
2:Collector
3:Base
TO–92NL Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Rank Q R
h
FE
90 ~ 180 130 ~ 450
Symbol
V
CBO
V
CEO
V
EBO
*1
h
FE
V
CE(sat)
f
T
C
ob
Conditions
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –1.4A
IC = –1.4A, IB = –25mA
*2
*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–30
–25
–11
90
typ
– 0.16
150
*2
Pulse measurement
max
450
– 0.22
85
Unit
V
V
V
V
MHz
pF
1
Transistor 2SB1592
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.3 –3
Collector current IC (A
)
C
IC/IB=56
)
CE
–3.0
–2.5
)
A
(
–2.0
C
–1.5
–1.0
IB=–12mA
Collector current I
– 0.5
0
0–6–5–4–1 –3–2
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
300
Ta=75˚C
0
– 0.01
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
200
100
Forward current transfer ratio h
VCE=–2V
– 0.3 –3
Collector current IC (A
Ta=25˚C
–10mA
–8mA
–6mA
–4mA
–2mA
)
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
)
Base to emitter voltage VBE (V
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
– 0.01
IC — V
BE
25˚C
Ta=75˚C
fT — I
E
VCB=–6V
f=200MHz
Ta=25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Emitter current IE (mA
VCE=–2V
–25˚C
)
)
)
pF
(
Cob — V
240
200
ob
160
120
80
40
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
f=1MHz
I
=0
E
Ta=25˚C
)
Loading...