Panasonic 2SB1589 Datasheet
Transistor
2SB1589
Silicon PNP epitaxial planer type
For low-frequency output amplification
Features
■
●
Low collector to emitter saturation voltage V
●
Large collector power dissipation PC.
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
–10
–10
–7
–2
–1.5
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : 1U
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Forward voltage
*1
Applicable to the built-in diode.
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
V
F
Conditions
VCB = –7V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –1V, IC = –400mA
IC = –1A, IB = –25mA
*2
*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1
IF = –500mA
min
–10
–10
–7
200
typ
– 0.24
190
65
*2
Pulse measurement
max
–1
700
– 0.35
–1.3
Unit
µA
V
V
V
V
MHz
pF
V
1
Transistor 2SB1589
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
CE(sat)
Ta=75˚C
25˚C
– 0.1 –1 –10
– 0.03
C
IC/IB=40
–25˚C
–0.3 –3
Collector current IC (A
)
)
CE
–3.0
–2.5
)
A
(
–2.0
C
–1.5
–1.0
IB=–3.0mA
Collector current I
– 0.5
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
0
– 0.01
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
400
300
200
100
Forward current transfer ratio h
VCE=–1V
– 0.3 –3
Collector current IC (A
Ta=25˚C
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
)
–2.4
–2.0
)
A
(
–1.6
C
–1.2
– 0.8
Collector current I
– 0.4
0
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
)
Base to emitter voltage VBE (V
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
1 3 10 30 100
IC — V
BE
VCE=–1V
25˚C
Ta=75˚C
fT — I
E
VCB=–6V
f=200MHz
Ta=25˚C
Emitter current IE (mA
–25˚C
)
)
)
pF
(
Cob — V
120
100
ob
80
60
40
20
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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