Panasonic 2SB1574 Datasheet

6.5±0.1

5.3±0.1

4.35±0.1

4.6±0.1

2.3±0.1

0.75±0.1

123

0.93±0.1

2.5±0.1

0.8max

1.0±0.2

7.3±0.1

1.8±0.1

2.3±0.1

0.5±0.1

0.5±0.1

0.1±0.05

1.0±0.1

6.5±0.2

2.3

5.35

4.35

13.3±0.3

2.3±0.1

5.5±0.26.0

1.8

0.75

0.6

3

2.3

21

0.5±0.1

Po wer Transistors

2SB1574 (Tentative)

Silicon PNP epitaxial planar type

For low-frequency output amplification

Features

■

●

Possible to solder radiation fin directly to printed cicuit boad

●

Type with universal characteristics

●

Collector breakdown voltage: V

●

Collector current: IC = –2A

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE1

Rank R S

FE1

120 to 240 170 to 340

h

CBO/VCEO

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

= –50V

–50
–50

–5
–3
–2
10

150

VCB = –10V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –200mA
VCE = –2V, IC = –1A
IC = –1A, IB = –50mA
IC = –1A, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

Unit

V
V
V
A

A
W
˚C
˚C

Conditions

min

–50
–50

–5

120

60

typ

– 0.2

– 0.85

80
45

Unit: mm

1:Base
2:Collector
3:Emitter
U Type Package

Unit: mm

1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)

max

– 0.1

Unit

µA

V
V
V

340

– 0.3
–1.2

V
V

MHz

60

pF

1