Panasonic 2SB1554 Datasheet

Po wer Transistors

2SB1554

Silicon PNP epitaxial planar type

For power amplification

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Allowing automatic insertion with radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Symbol

V
V
V
I

CP

I

C

I

B

P

C

T

j

T

stg

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

CBO

CEO

EBO

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

–60
–60
–20

–8
–4
–2
15

2

150

–55 to +150

=25˚C)

VCB = –60V, IE = 0
VCE = –50V, IB = 0
VEB = –15V, IC = 0
IC = –10mA, IB = 0
VCE = –4V, IC = – 0.8A
VCE = –4V, IC = –2A
IC = –2A, IB = –100mA
IC = –2A, IB = –100mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A,
IB1 = –100mA, IB2 = 100mA,
VCC = –50V

Unit

V
V
V
A
A
A

W

˚C
˚C

Conditions

4.2±0.2

13.0±0.2

18.0±0.5
Solder Dip

C1.0

123

2.5±0.2 2.5±0.2

min

–60

80
30

2.5±0.2

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

typ

25

0.4

0.6

0.25

1.2±0.1

Unit: mm

5.0±0.1

1.010.0±0.2

90°

C1.0

2.25±0.2

0.55±0.1

1:Base
2:Collector
3:Emitter

MT4 Type Package

max

–10
–50
–10

Unit

µA
µA
µA

V

400

–1.0
–1.5

V
V

MHz

µs
µs
µs

*

h

Rank classification

FE1

Rank Q P O

h

FE1

80 to 160 120 to 240 200 to 400

1

Po wer Transistors 2SB1554

PC—Ta IC—V

20

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

–100

)
V

(

–30

BE(sat)

–10

–3

–1

25˚C

– 0.3

– 0.1

– 0.03

Base to emitter saturation voltage V

– 0.01

– 0.01

– 0.03

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

=2.0W)

(P

C

(1)

(2)

V

BE(sat)—IC

TC=–25˚C

100˚C

– 0.1 –1 –10

– 0.3 –3

IC/IB=20

)

CE

)

–4.0

TC=25˚C

–3.5

)

–3.0

A

(

C

–2.5

–2.0

–1.5

–1.0

Collector current I

– 0.5

0

0 –16–4 –12–8 –14–2 –10–6

)

Collector to emitter voltage VCE (V

hFE—I

5

10

FE

4

10

3

10

TC=100˚C

2

10

10

–25˚C

IB=–50mA
–45mA
–40mA

C

25˚C

–35mA

–30mA
–25mA

–20mA
–15mA

–10mA

–5mA

VCE=–4V

Forward current transfer ratio h

1

– 0.001 – 0.01 – 0.1 –1 –10

Collector current IC (A

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

TC=100˚C

25˚C

– 0.01

– 0.1 –1 –10

– 0.03

Collector current IC (A

fT—I

3

1

– 0.01

– 0.1 –1 –10

– 0.03

Collector current IC (A

–25˚C

– 0.3 –3

C

VCE=–10V
f=1MHz
T

=25˚C

C

– 0.3 –3

IC/IB=20

)

)

Cob—V

4

10

)
pF

(

ob

3

10

2

10

10

Collector output capacitance C

1

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
0–5–4–1 –3–2

Collector current IC (A

stg

t

on

, tf—I

Pulsed tw=1ms
Duty cycle=1%
I
(–I
V
T

t

stg

t

f

C/IB

CC
C

C

=20

B1=IB2

=–50V

=25˚C

Area of safe operation (ASO)

–100

)

)

–30

)

I

–10

CP

A

(

C

I

–3

C

–1

– 0.3

– 0.1

Collector current I

– 0.03

– 0.01

–1 –10 –100 –1000–3 –30 –300

Collector to emitter voltage VCE (V

DC

Non repetitive pulse

=25˚C

T

C

t=1ms

10ms

)