Panasonic 2SB1537 Datasheet
Transistor
2SB1537
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2357
Features
■
●
Low collector to emitter saturation voltage V
●
Large collector power dissipation PC.
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
–10
–10
–5
–1.2
–1
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : 1L
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
VCB = –7V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –100mA
IC = –500mA, IB = –5mA
**
**
VCB = –5V, IE = 50mA, f = 200MHz
VCB = –5V, IE = 0, f = 1MHz
min
–10
–10
–5
200
typ
max
–1
800
– 0.15
120
45
**
Pulse measurement
Unit
µA
V
V
V
V
MHz
pF
1
Transistor 2SB1537
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
CE(sat)
Ta=75˚C
C
IC/IB=100
25˚C
–25˚C
CE
)
A
(
–1.2
–1.0
– 0.8
C
– 0.6
– 0.4
Ta=25˚C
IB=–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
Collector current I
– 0.2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
Ta=75˚C
400
300
25˚C
–25˚C
– 0.2mA
C
VCE=–2V
–1.2
–1.0
)
A
(
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
)
480
)
400
MHz
(
T
320
240
0
0 –2.4–2.0–1.6– 0.4 –1.2– 0.8
Base to emitter voltage VBE (V
IC — V
Ta=75˚C
25˚C
fT — I
BE
–25˚C
E
VCE=–2V
VCB=–5V
Ta=25˚C
f=200MHz
)
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
)
pF
(
– 0.01
120
100
ob
80
60
40
20
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Cob — V
CB
)
IE=0
f=1MHz
Ta=25˚C
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
200
100
Forward current transfer ratio h
0
– 0.01
– 0.03
Collector current IC (A
)
– 0.1 –1 –10
– 0.3 –3
)
160
80
Transition frequency f
0
1 10 100 10003 30 300
Emitter current IE (mA
)
2
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