Panasonic 2SB1503 Datasheet
Po wer Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2276
Features
■
●
Optimum for 110W HiFi output
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Ratings
–160
–140
–5
–12
–7
120
3.5
150
–55 to +150
=25˚C)
: < –2.5V
CE(sat)
Unit
V
V
V
A
A
W
Internal Connection
˚C
˚C
Conditions
VCB = –160V, IE = 0
VCE = –140V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –7A
IC = –7A, IB = –7mA
IC = –7A, IB = –7mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –7A, IB1 = –7mA, IB2 = 7mA,
VCC = –50V
6.010.0
26.0±0.520.0±0.5
1.5
2.5
20.0±0.5
1.5
Solder Dip
10.9±0.5
123
B
min
–140
2000
5000
3.0±0.3
1.0±0.2
5.45±0.3
typ
20
1.0
1.5
1.2
φ 3.3±0.2
5.0±0.3
3.0
4.02.0
2.0±0.3
TOP–3L Package
C
E
max
–100
–100
–100
30000
–2.5
–3.0
Unit: mm
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base
2:Collector
3:Emitter
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
*
h
Rank classification
FE2
Rank Q S P
h
5000 to 15000 7000 to 21000 8000 to 30000
FE2
1
Po wer Transistors 2SB1503
PC—Ta IC—V
200
)
W
(
C
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
Base to emitter saturation voltage V
– 0.1
– 0.1 –1 –10 –100– 0.3 –3 –30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=3.5W)
(P
C
(1)
(3)
(2)
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=1000
TC=–25˚C
25˚C
100˚C
Collector current IC (A
)
CE
–12
–10
)
A
(
–8
C
–6
–4
IB=–2mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
300
100
Forward current transfer ratio h
30
10
– 0.01
– 0.03
Collector current IC (A
TC=100˚C
– 0.1 –1 –10
– 0.3 –3
–1mA
– 0.9mA
– 0.8mA
C
TC=25˚C
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
VCE=–5V
25˚C
–25˚C
)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
Collector to emitter saturation voltage V
)
1000
)
pF
(
300
ob
100
30
10
Collector output capacitance C
V
CE(sat)—IC
IC/IB=1000
TC=100˚C
25˚C
–25˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
CB
)
IE=0
f=1MHz
T
=25˚C
C
Collector current IC (A
Cob—V
3
1
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
)
100
30
)
µs
(
10
f
,t
stg
3
t
stg
,t
on
t
f
1
t
on
0.3
0.1
Switching time t
0.03
0.01
0 –16–4 –12–8
Collector current IC (A
2
ton, t
, tf—I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=1000
I
C/IB
)
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
I
CP
)
–10
A
(
I
C
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
10ms
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
)
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