Panasonic 2SB1502 Datasheet

Po wer Transistors

2SB1502

Silicon PNP epitaxial planar type Darlington

For power amplification
Complementary to 2SD2275

Features

■

●

Optimum for 55W HiFi output

●

High foward current transfer ratio hFE: 5000 to 30000

●

Low collector to emitter saturation voltage V

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

CBO

CEO

EBO

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

–120
–100

–5
–8
–5
60

3.5

150

–55 to +150

=25˚C)

: < 2.5V

CE(sat)

Unit

V
V
V
A
A

W

Internal Connection

˚C
˚C

Conditions

VCB = –120V, IE = 0
VCE = –100V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –4A
IC = –4A, IB = –4mA
IC = –4A, IB = –4mA
VCE = –10V, IC = – 0.5A, f = 1MHz

IC = –4A, IB1 = –4mA, IB2 = 4mA,
VCC = –50V

6.010.0

26.0±0.520.0±0.5

1.5

2.5

20.0±0.5

1.5

Solder Dip

10.9±0.5

123

B

min

–100
2000
5000

3.0±0.3

1.0±0.2

5.45±0.3

typ

20

1.0

0.8

1.0

φ 3.3±0.2

5.0±0.3

3.0

4.02.0

2.0±0.3

TOP–3L Package

C

E

max

–100
–100
–100

30000

–2.5
–3.0

Unit: mm

3.0

2.0

1.5

2.7±0.3

0.6±0.2

1:Base
2:Collector
3:Emitter

Unit

µA
µA
µA

V

V
V

MHz

µs
µs
µs

*

h

Rank classification

FE2

Rank Q S P

h

5000 to 15000 7000 to 21000 8000 to 30000

FE2

1

Po wer Transistors 2SB1502

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

–100

)
V

(

–30

BE(sat)

–10

–3

–1

– 0.3

Base to emitter saturation voltage V

– 0.1

– 0.1 –1 –10 –100– 0.3 –3 –30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(P

=3.5W)

C

(1)

(2)
(3)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=1000

TC=–25˚C

100˚C

25˚C

Collector current IC (A

)

CE

–6

–5

)
A

(

–4

C

–3

–2

IB=– 0.5mA

Collector current I

–1

0

0 –12–10–8–2 –6–4

)

Collector to emitter voltage VCE (V

hFE—I

100000

30000

FE

10000

3000

1000

300

100

Forward current transfer ratio h

30

10

– 0.01

– 0.03

Collector current IC (A

TC=100˚C

– 0.1 –1 –10

– 0.3 –3

TC=25˚C

– 0.4mA

– 0.3mA

– 0.2mA

– 0.1mA

C

VCE=5V

25˚C

–25˚C

)

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

Collector to emitter saturation voltage V

)

1000

)
pF

(

300

ob

100

30

10

Collector output capacitance C

V

CE(sat)—IC

IC/IB=1000

TC=100˚C

–25˚C

– 0.1 –1 –10 –100– 0.3 –3 –30

3

1

–1 –3 –10 –30 –100

25˚C

Collector current IC (A

Cob—V

CB

IE=0
f=1MHz
T

=25˚C

C

)

Collector to base voltage VCB (V

)

100

30

)
µs

(

10

f

,t

stg

t

3

on

,t

on

t

f

1

t

stg

0.3

0.1

Switching time t

0.03

0.01
0–8–2 –6–4

Collector current IC (A

2

ton, t

, tf—I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=1000

I

C/IB

)

(–I

B1=IB2

V

=–50V

CC

=25˚C

T

C

Area of safe operation (ASO)

–100

–30

)

I

CP

–10

A

(

C

I

C

–3

–1

– 0.3

– 0.1

Collector current I

– 0.03

– 0.01

–1 –10 –100 –1000–3 –30 –300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

)