Panasonic 2SB1492 Datasheet

Po wer Transistors
2SB1492
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2254
Features
Optimum for 60W HiFi output
High foward current transfer ratio hFE: 5000 to 30000
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Electrical Characteristics (T
Symbol
V V V I
CP
I
C
P
C
T
j
T
stg
Parameter
Collector cutoff current
Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Ratings
–130 –110
–5
–10
–6 70
3.5
150
–55 to +150
=25˚C)
: < –2.5V
CE(sat)
Unit
V V V A A
W
Internal Connection
˚C ˚C
Conditions
VCB = –130V, IE = 0 VCE = –110V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –5A IC = –5A, IB = –5mA IC = –5A, IB = –5mA VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –5A, IB1 = –5mA, IB2 = 5mA, VCC = –50V
6.010.0
26.0±0.520.0±0.5
1.5
2.5
20.0±0.5
1.5
Solder Dip
10.9±0.5
123
B
min
–110 2000 5000
3.0±0.3
1.0±0.2
5.45±0.3
typ
20
0.9
2.5
1.7
φ 3.3±0.2
5.0±0.3
3.0
4.02.0
2.0±0.3
TOP–3L Package
C
E
max
–100 –100 –100
30000
–2.5 –3.0
Unit: mm
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base 2:Collector 3:Emitter
Unit
µA µA µA
V
V
MHz
µs µs µs
*
h
Rank classification
FE2
Rank Q P
h
5000 to 15000 8000 to 30000
FE2
1
Po wer Transistors 2SB1492
PC—Ta IC—V
80
)
70
W
(
C
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–100
) V
(
–30
BE(sat)
–10
–3
–1
100˚C
– 0.3
Base to emitter saturation voltage V
– 0.1
– 0.1 –1 –10 –100– 0.3 –3 –30
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3.5W)
C
(1)
(2)
(3)
V
BE(sat)—IC
IC/IB=1000
TC=–25˚C
25˚C
Collector current IC (A
)
CE
–12
–10
) A
(
–8
C
–6
–4
IB=–5mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
300
100
Forward current transfer ratio h
30
10
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
–1mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
C
TC=100˚C
–25˚C
TC=25˚C
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA – 0.1mA
VCE=–5V
25˚C
)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
Collector to emitter saturation voltage V
)
1000
) pF
(
300
ob
100
30
10
Collector output capacitance C
V
CE(sat)—IC
IC/IB=1000
TC=100˚C
25˚C –25˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
CB
)
IE=0 f=1MHz T
=25˚C
C
Collector current IC (A
Cob—V
3
1
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
)
100
30
) µs
(
10
f
,t
stg
t
3
stg
,t
on
t
f
1
t
on
0.3
0.1
Switching time t
0.03
0.01 0 –16–4 –12–8
Collector current IC (A
2
ton, t
, tf—I
stg
C
Pulsed tw=1ms Duty cycle=1%
=1000
I
C/IB
)
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
I
)
CP
–10
A
(
I
C
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
10ms
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
)
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