Panasonic 2SB1488 Datasheet

Transistor

2SB1488

Silicon PNP triple diffusion planer type

For power switching

Features

■

●

High foward current transfer ratio hFE.

●

High-speed switching.

●

High collector to base voltage V

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

CBO

.

Ratings

–400
–400

–7
–1

– 0.5

1

150

–55 ~ +150

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Collector current fall time
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

C

ob

Rank P Q

h

FE1

80 ~ 160 130 ~ 280

Conditions

VCB = –400V, IE = 0
VCE = –100V, IB = 0
VBE = –5V, IC = 0
IC = –1mA, IB = 0

*1

VCE = –5V, IC = –50mA
VCE = –5V, IC = –300mA
IC = –100mA, IB = –10mA
IC = –100mA, IB = –10mA

*2

*2

*2

VCB = –10V, IE = 0.1A, f = 1MHz
IC = –100mA, RL = 1.5kΩ
IB1 = –10mA, IB2 = 10mA
VCC = –150V
VCB = –10V, IE = 0, f = 1MHz

min

–400

80

typ

max

–1
–1
–1

280

Unit

µA
µA
µA

V

10

– 0.25

– 0.8

*2

0.4

5.5

0.5

– 0.5
–1.2

25

1.0

6.5

1.0

20

40

*2

Pulse measurement

V
V

MHz

µs
µs
µs

pF

1

Transistor

2SB1488

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

–100

)
V

(

–30

BE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

Base to emitter saturation voltage V

– 0.01

– 0.01

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

25˚C

Ta=–25˚C

100˚C

– 0.1 –1 –10

– 0.03

C

– 0.3 –3

Collector current IC (A

IC/IB=5

)

V

CE

)

–1.0

– 0.9

– 0.8

)
mA

(

– 0.7

C

– 0.6

– 0.5

– 0.4

– 0.3

Collector current I

– 0.2

– 0.1

0

0 –12–10–8–2 –6–4

)

Collector to emitter voltage VCE (V

hFE — I

10000

3000

FE

1000

300

100

30

10

Forward current transfer ratio h

3

1

– 0.001

Ta=100˚C

–25˚C

– 0.01

– 0.003

– 0.03

Collector current IC (A

Ta=25˚C

=100mA

I

B

50mA

10mA
5mA

1mA

0.5mA

0.1mA

C

VCE=–5V

25˚C

– 0.1 –1

– 0.3

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

– 0.03

)

Collector current IC (A

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1
– 0.001

– 0.003

Collector current IC (A

— I

CE(sat)

– 0.1 –1 –10

C

IC/IB=5

Ta=100˚C

25˚C

–25˚C

– 0.3 –3

)

fT — I

C

VCE=–10V
Ta=25˚C

– 0.01

– 0.03

– 0.1 –1

– 0.3

)

Cob — V

100

)

90

pF

(

80

ob

70

60

50

40

30

20

10

Collector output capacitance C

0

–1 –3 –10 –30 –100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

t

f

0.3

0.1

Switching time t

0.03

0.01
0 – 1.0– 0.8– 0.2 – 0.6– 0.4

Collector current IC (A

t

t

on

stg

stg

, tf — I

Pulsed tw=1ms
Duty cycle=1%
I

C/IB

V

CC

Ta=25˚C

C

=5(–IB1=IB2)

=–100V

)