Panasonic 2SB1463G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB1463G

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

Complementary to 2SC2440G

■ Features

• High collector-emitter voltage (Base open) V

• Low noise voltage NV

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing.

CEO

■ Package

• Code
SSMini3-F3

• Marking Symbol: I

• Pin Name

1. Base

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +125 °C

stg

−150 V

−150 V

−5V

−50 mA

−100 mA

125 mW

125 °C

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Noise voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB 150 mV

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S

h

FE

*

130 to 220 185 to 330

CEOIC

EBOIE

I

CBO

h

FE

CE(sat)IC

T

ob

= −100 µA, IB = 0 −150 V

= −10 µA, IC = 0 −5V

VCB = −100 V, IE = 0 −1 µA

VCE = −5 V, IC = −10 mA 130 330 

= −30 mA, IB = −3 mA −1V

VCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz

VCB = −10 V, IE = 0, f = 1 MHz 4 pF

Rg = 100 kΩ, Function = FLAT

Publication date: May 2007 SJC00388AED

1

2SB1463G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

140

)

120

mW
(

C

100

80

60

40

20

Collector power dissipation P

0

0

40

a

80

Ambient temperature Ta (°C

V

 I

−1

CE(sat)

(V)

CE(sat)

− 0.1

Ta = 85°C

25°C

−1 −10 −100

− 0.1

Collector-emitter saturation voltage V

− 0.01

C

IC / IB = 10

−25°C

Collector current IC (mA)

120

IC  V

− 0.8 mA

hFE  I

25°C

−25°C

CE

IB = −1.0 mA

C

VCE = −5 V

− 0.9 mA

− 0.7 mA

− 0.5 mA

− 0.4 mA

− 0.3 mA

− 0.2 mA

− 0.1 mA

)

−50

−40

)

mA
(

C

−30

−20

Collector current I

−10

0

0 −0.2 −0.6 −0.8 −1.0 −1.2−0.4 −1.4

10

(pF)

ob

C

1

Collector output capacitance

(Common base, input open circuited)

0.1
0 −40−10 −30−20

−60

IC / IB = 10

−50

− 0.6 mA

−40

(mA)

C

−30

−20

Collector current I

−10

0

)

0 −12−10−8−2 −6−4

Collector-emitter voltage VCE (V)

350

300

FE

250

200

150

100

Forward current transfer ratio h

50

0

−1 −10 −100

Ta = 85°C

Collector current IC (mA

IC  V

BE

V

= −5 V

CE

25°C

Ta = 85°C

−25°C

Collector-base voltage VCB (V

Cob  V

Collector-base voltage V

CB

f = 1 MHz
T

= 25°C

a

CB

(V)

)

2

SJC00388AED