Panasonic 2SB1462J User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB1462J

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SD2216J

■ Features

• High forward current transfer ratio h

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

FE

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

−60 V

−50 V

−7V

−100 mA

−200 mA

125 mW

125 °C

−55 to +125 °C

+0.05

1.60

–0.03

1.00

±0.05

3

12

0.27

±0.02

(0.50)(0.50)

5˚

Marking Symbol: A

±0.05

0.12

0.80

+0.05

–0.03

±0.05

0.85

1.60
5˚

(0.80)

+0.05

–0.03

0 to 0.02

0.70

SSMini3-F1 Package

Unit: mm

+0.03
–0.01

(0.375)

0.10 max.

1: Base
2: Emitter
3: Collector

EIAJ: SC-89

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage

Transition frequency f

Collector output capacitance C

1

*

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE

V

CE(sat)IC

T

ob

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

= −10 µA, IE = 0 −60 V

= −100 µA, IB = 0 −50 V

= −10 µA, IC = 0 −7V

VCB = −20 V, IE = 0 − 0.1 µA

VCE = −10 V, IE = 0 −100 µA

VCE = −10 V, IC = −2 mA 160 460 

= −100 mA, IB = −10 mA − 0.3 − 0.5 V

VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz

VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF

Publication date: June 2007 SJC00087CED

1

2SB1462J

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

150

)

125

mW
(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

IC  V

−120

−100

)

mA
(

−80

C

−60

−40

Collector current I

−20

Ta = 75°C

a

BE

VCE = −10 V

25°C

−25°C

IC  I

CE(sat)

Ta = 75°C

B

 I

VCE = −10 V

= 25°C

T

a

)

C

IC / IB = 10

−1 200

−1 000

)

−800

µA

(

B

−600

−400

Base current I

−200

0

0 −1.2−1.0− 0.8− 0.2 − 0.6− 0.4

360

300

FE

240

180

120

Forward current transfer ratio h

60

−120

−100

)

mA
(

−80

C

−60

−40

Collector current I

−20

0

)

0 −360−300−240−60 −180−120

Base current IB (µA

V

−10

)
V

(

CE(sat)

−1

− 0.1

− 0.01

25°C

−25°C

IB  V

BE

VCE = −10 V
T

a

Base-emitter voltage VBE (V

hFE  I

C

Ta = 75°C

25°C

−25°C

VCE = −10 V

= 25°C

)

0

0 −1.2−1.0− 0.8− 0.2 − 0.6− 0.4

Base-emitter voltage VBE (V

Cob  V

6

(pF)

ob

C

5

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

CB

Collector-base voltage VCB (V

2

f = 1 MHz

= 0

I

E

= 25°C

T

a

Collector-emitter saturation voltage V

− 0.001

)

−1 −10 −100 −1000

Collector current IC (mA

)

0

−1 −10 −100 −1000

Collector current IC (mA

)

)

SJC00087CED