Panasonic 2SB1462 Datasheet

Transistor

2SB1462

Silicon PNP epitaxial planer type

For general amplification
Complementary to 2SD2216

Features

■

●

High foward current transfer ratio hFE.

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

Ratings

–60
–50

–7
–200
–100

125
125

–55 ~ +125

VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

Unit

V
V

V
mA
mA

mW

˚C
˚C

Conditions

1.6±0.15

0.8±0.1 0.40.4

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS-Mini Type Package

0.2±0.1

0 to 0.1

Marking symbol : A

min

–60
–50

–7

160

typ

– 0.11

80

2.7

max

– 0.1
–100

460

– 0.3

Unit: mm

3

+0.1

+0.1

–0.05

0.2

–0.05

0.15

Unit

µA
µA

V
V
V

V

MHz

pF

*

hFE Rank classification

Rank Q R S

h

FE

160 ~ 260 210 ~ 340 290 ~ 460

Marking Symbol AQ AR AS

1

Transistor 2SB1462

PC — Ta IC — V

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IB — V

BE

–400

–350

–300

)
µA

(

–250

B

–200

VCE=–5V
Ta=25˚C

CE

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

0 –18–6 –12

)

Collector to emitter voltage VCE (V

IB=–300µA

IC — V

–240

–200

)
mA

(

–160

C

–120

Ta=75˚C

Ta=25˚C

–250µA

–200µA

–150µA

–100µA

–50µA

BE

VCE=–5V

25˚C

–25˚C

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

)

)

–10

V

(

CE(sat)

– 0.3

– 0.1

0

0 –450–150 –300

–3

–1

IC — I

VCE=–5V
Ta=25˚C

Base current IB (µA

V

— I

CE(sat)

B

)

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

–150

Base current I

–100

–50

0

0 –1.8– 0.6 –1.2

Base to emitter voltage VBE (V

hFE — I

C

600

FE

500

400

Ta=75˚C

300

200

100

Forward current transfer ratio h

25˚C

–25˚C

0

–1 –10 –100 –1000–3 –30 –300

VCE=–10V

Collector current IC (mA

–80

Collector current I

–40

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

)

Base to emitter voltage VBE (V

fT — I

E

160

VCB=–10V
Ta=25˚C

140

)
MHz

120

(

T

100

80

60

40

Transition frequency f

20

0

0.1 1 10 1000.3 3 30

Emitter current IE (mA

)

)

– 0.03

– 0.01

– 0.003

– 0.001

Collector to emitter saturation voltage V

–1 –10 –100 –1000–3 –30 –300

Collector current IC (mA

Cob — V

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

–1 –3 –10 –30 –100

CB

)

IE=0
f=1MHz
Ta=25˚C

Collector to base voltage VCB (V

)

2