Panasonic 2SB1440 Datasheet
Transistor
2SB1440
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD2185
Features
■
●
Low collector to emitter saturation voltage V
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–50
–50
–5
–3
–2
1
150
–55 ~ +150
*
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : 1I
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE1
Symbol
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank R S
h
FE1
120 ~ 240 170 ~ 340
Conditions
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*
VCE = –2V, IC = –200mA
VCE = –2V, IC = –1A
IC = –1A, IB = –50mA
IC = –1A, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–50
–50
–5
120
60
typ
– 0.2
– 0.85
80
45
max
340
– 0.3
–1.2
60
Unit
V
V
V
V
V
MHz
pF
1
Transistor 2SB1440
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
25˚C
– 0.1 –1 –10
– 0.03
C
IC/IB=20
Ta=–25˚C
75˚C
– 0.3 –3
Collector current IC (A
)
V
CE
)
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE — I
10000
3000
FE
1000
300
Ta=75˚C
100
30
10
Forward current transfer ratio h
3
1
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Ta=25˚C
IB=700µA
600µA
500µA
400µA
300µA
200µA
100µA
C
VCE=–2V
25˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
)
Collector current IC (A
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
1 3 10 30 100
Emitter current IE (mA
— I
CE(sat)
– 0.1 –1 –10
C
Ta=75˚C
25˚C
–25˚C
– 0.3 –3
IC/IB=20
)
fT — I
E
VCB=–10V
f=200MHz
Ta=25˚C
)
)
pF
(
Cob — V
120
100
ob
80
60
40
20
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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