Panasonic 2SB1438 Datasheet
Transistor
2SB1438
Silicon PNP epitaxial planer type
For low-frequency output amplification
Features
■
●
Low collector to emitter saturation voltage V
●
High collector to emitter voltage V
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Rank R S
h
FE1
120 ~ 240 170 ~ 340
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
*1
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
.
CEO
Ratings
–100
–100
–55 ~ +150
–5
–3
–2
150
.
CE(sat)
1
VCB = –50V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –200mA
VCE = –2V, IC = –1A
IC = –1A, IB = –50mA
IC = –1A, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
*2
Unit: mm
2.5±0.1
6.9±0.1
4.00.7 0.8
0.15
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1.2±0.1
+
0.1
0.45
–
0.05
min
–100
–100
–5
120
1.05
±0.05 (1.45)
0.21.01.0
–0.05
+0.1
321
0.45
2.5±0.1
1:Emitter
2:Collector
3:Base
MT2 Type Package
0.65
max.
typ
max
– 0.1
0.5
4.5±0.114.5±0.5
(HW type)
Unit
µA
V
V
V
340
60
*2
*2
– 0.17
– 0.85
90
70
*2
Pulse measurement
– 0.3
–1.2
90
V
V
MHz
pF
1
Transistor 2SB1438
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
– 0.1 –1 –10
– 0.03
C
IC/IB=20
Ta=–25˚C25˚C
100˚C
– 0.3 –3
Collector current IC (A
)
V
CE
)
–2.0
–1.8
–1.6
)
A
(
–1.4
C
–1.2
–1.0
– 0.8
– 0.6
Collector current I
– 0.4
– 0.2
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE — I
500
450
FE
400
350
300
250
200
150
100
Forward current transfer ratio h
50
0
– 0.01
Ta=100˚C
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
–25˚C
C
Ta=25˚C
=–8mA
I
B
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
VCE=–2V
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
)
)
MHz
(
T
Transition frequency f
25˚C
– 0.01
– 0.03
Collector current IC (A
200
180
160
140
120
100
80
60
40
20
0
1 3 10 30 100
Emitter current IE (mA
— I
CE(sat)
– 0.1 –1 –10
C
IC/IB=20
Ta=100˚C
–25˚C
– 0.3 –3
)
fT — I
E
VCB=–10V
Ta=25˚C
)
)
pF
(
Cob — V
240
200
ob
160
120
80
40
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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