Panasonic 2SB1417A, 2SB1417 Datasheet
Po wer Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2137 and 2SD2137A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
Allowing automatic insertion with radial taping
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB1417
2SB1417A
2SB1417
2SB1417A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
–60
–80
–60
–80
–6
–5
–3
15
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
4.2±0.2
13.0±0.2
18.0±0.5
Solder Dip
C1.0
123
2.5±0.2 2.5±0.2
2.5±0.2
0.65±0.1
1.05±0.10.35±0.1
0.55±0.1
1.2±0.1
Unit: mm
5.0±0.1
1.010.0±0.2
90°
C1.0
2.25±0.2
0.55±0.1
1:Base
2:Collector
3:Emitter
MT4 Type Package
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
2SB1417
2SB1417A
2SB1417
2SB1417A
Emitter cutoff current
Collector to emitter
voltage
2SB1417
2SB1417A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE1
C
Symbol
I
CES
I
CEO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –6V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –5V, IC = – 0.2A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
Rank Q P
h
FE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank h
Conditions
= 70 to 250) in the rank classification.
FE1
min
–60
–80
70
10
typ
30
0.3
1.0
0.2
max
–100
–100
–100
–100
–100
250
–1.8
–1.2
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
Po wer Transistors 2SB1417, 2SB1417A
PC—Ta IC—V
20
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0 –2.0–1.6– 0.4 –1.2– 0.8
Base to emitter voltage VBE (V
(1) TC=Ta
(2) Without heat sink
(2)
IC—V
TC=100˚C
25˚C
–25˚C
(P
(1)
=2.0W)
C
BE
VCE=–4V
CE
)
–6
–5
)
A
(
C
IB=–100mA
–4
–3
–2
Collector current I
–1
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
TC=100˚C
300
100
Forward current transfer ratio h
30
10
– 0.01
)
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
25˚C
C
TC=25˚C
–90mA
–80mA
–70mA
–60mA
–50mA
–40mA
–30mA
–20mA
–10mA
VCE=–4V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
=–25˚C
T
C
100˚C
25˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
fT—I
C
VCE=–5V
f=10MHz
T
=25˚C
C
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=8
)
)
Cob—V
1000
)
pF
(
300
ob
100
30
10
3
Collector output capacitance C
1
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
0–4–1 –3–2
Collector current IC (A
stg
t
stg
, tf — I
t
on
t
f
C
Pulsed tw=1ms
Duty cycle=1%
=5
I
C/IB
=–IB2)
(I
B1
V
=–200V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
)
–10
A
(
I
CP
C
–3
I
C
10ms
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
2SB1417
2SB1417A
)
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