Panasonic 2SB1417A, 2SB1417 Datasheet

Po wer Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD2137 and 2SD2137A
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage V
Allowing automatic insertion with radial taping
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage
2SB1417 2SB1417A 2SB1417
2SB1417A Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
–60 –80 –60 –80
–6 –5 –3 15
2.0
150
–55 to +150
Unit
V
V
V A A
W
˚C ˚C
4.2±0.2
13.0±0.2
18.0±0.5 Solder Dip
C1.0
123
2.5±0.2 2.5±0.2
2.5±0.2
0.65±0.1
1.05±0.10.35±0.1
0.55±0.1
1.2±0.1
Unit: mm
5.0±0.1
1.010.0±0.2
90°
C1.0
2.25±0.2
0.55±0.1
1:Base 2:Collector 3:Emitter
MT4 Type Package
Electrical Characteristics (T
Parameter
Collector cutoff current Collector cutoff current
2SB1417 2SB1417A 2SB1417
2SB1417A Emitter cutoff current Collector to emitter voltage
2SB1417
2SB1417A
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*
h
Rank classification
FE1
C
Symbol
I
CES
I
CEO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –6V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –5V, IC = – 0.2A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V
Rank Q P
h
FE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank h
Conditions
= 70 to 250) in the rank classification.
FE1
min
–60 –80
70 10
typ
30
0.3
1.0
0.2
max
–100 –100 –100 –100 –100
250
–1.8 –1.2
Unit
µA
µA
µA
V
V V
MHz
µs µs µs
1
Po wer Transistors 2SB1417, 2SB1417A
PC—Ta IC—V
20
) W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–6
–5
) A
(
–4
C
–3
–2
Collector current I
–1
0
0 –2.0–1.6– 0.4 –1.2– 0.8
Base to emitter voltage VBE (V
(1) TC=Ta (2) Without heat sink
(2)
IC—V
TC=100˚C
25˚C
–25˚C
(P
(1)
=2.0W)
C
BE
VCE=–4V
CE
)
–6
–5
) A
(
C
IB=–100mA
–4
–3
–2
Collector current I
–1
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
TC=100˚C
300
100
Forward current transfer ratio h
30
10
– 0.01
)
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
25˚C
C
TC=25˚C
–90mA
–80mA
–70mA –60mA
–50mA
–40mA
–30mA
–20mA
–10mA
VCE=–4V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
) MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
=–25˚C
T
C
100˚C
25˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
fT—I
C
VCE=–5V f=10MHz T
=25˚C
C
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=8
)
)
Cob—V
1000
) pF
(
300
ob
100
30
10
3
Collector output capacitance C
1
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0 f=1MHz
=25˚C
T
C
)
ton, t
100
30
) µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01 0–4–1 –3–2
Collector current IC (A
stg
t
stg
, tf — I
t
on
t
f
C
Pulsed tw=1ms Duty cycle=1%
=5
I
C/IB
=–IB2)
(I
B1
V
=–200V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
)
–10
A
(
I
CP
C
–3
I
C
10ms
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
2SB1417
2SB1417A
)
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