Panasonic 2SB1393A Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1985 and 2SD1985A
Features
■
●
Satisfactory linearity of foward current transfer ratio h
●
Low collector to emitter saturation voltage V
●
Full-pack package which can be installed to the heat sink with
CE(sat)
one screw
FE
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB1393
2SB1393A
2SB1393
2SB1393A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
2SB1393
2SB1393A
2SB1393
2SB1393A
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
2SB1393
2SB1393A
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE1
Rank Q P
h
FE1
70 to 150 120 to 250
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CEO
I
CES
I
EBO
V
CEO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Ratings
–60
–80
–60
–80
–5
–5
–3
25
2.0
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –5V, IC = – 0.1A, f = 1MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
TO–220 Full Pack Package(a)
min
typ
–60
–80
70
10
20
0.5
1.2
0.3
max
–300
–300
–200
–200
–1
250
–1.8
–1.2
1:Base
2:Collector
3:Emitter
Unit
µA
µA
mA
V
V
V
MHz
µs
µs
µs
1
Po wer Transistors 2SB1393, 2SB1393A
PC—Ta IC—V
40
)
W
(
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
10000
FE
3000
1000
300
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=2.0W)
(P
C
(1)
(2)
(3)
Ambient temperature Ta (˚C
hFE—I
C
TC=125˚C
25˚C
VCE=–4V
BE
)
–6
–5
)
A
(
C
Collector current I
)
TC=100˚C
–4
–3
–2
25˚C
–1
0
0 –2.0–1.6– 0.4 –1.2– 0.8
Base to emitter voltage VBE (V
fT—I
1000
)
300
MHz
(
T
100
30
–25˚C
VCE=–4V
)
C
VCE=–5V
f=1MHz
T
=25˚C
C
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
10000
)
pF
(
3000
ob
1000
300
V
CE(sat)—IC
TC=100˚C
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
Cob — V
25˚C
–25˚C
– 0.3 –3
CB
IE=0
f=1MHz
T
IC/IB=10
)
=25˚C
C
100
30
Forward current transfer ratio h
10
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
10
3
Transition frequency f
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Area of safe operation (ASO) R
–10
I
CP
–3
I
C
)
A
(
C
– 0.3
– 0.1
– 0.03
– 0.01
Collector current I
– 0.003
– 0.001
10ms
–1
DC
–1 –10 –100 –1000–3 –30 –300
t=1ms
Non
repetitive
pulse
T
2SB1393A
2SB1393
Collector to emitter voltage VCE (V
=25˚C
C
10000
)
1000
˚C/W
(
(t)
th
100
10
1
Thermal resistance R
0.1
–4
10
)
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) P
(2) P
–3
–2
10
100
30
Collector output capacitance C
10
–1 –3 –10 –30 –100
)
th(t)
=10V × 0.2A (2W) and without heat sink
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
T
–1
10
110
Time t (s
Collector to base voltage VCB (V
—t
1010
)
2
10
(1)
(2)
3
)
4
10
2
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