Panasonic 2SB1378 Datasheet
Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1996
Features
■
●
Low collector to emitter saturation voltage V
●
Optimum for low-voltage operation and for converters.
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
CE(sat)
Unit: mm
6.9±0.1
0.7 4.0
0.15
.
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
Unit
V
V
V
A
A
mW
˚C
Note: In addition to the
123
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
2.5±0.1
1.05
±0.05
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.0
0.85
(1.45)
0.8
0.8
3.5±0.114.5±0.5
–0.05
+0.1
0.45
2.5±0.1
˚C
1.2±0.1
0.65
max.
+
0.1
0.45
–
0.05
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R S
h
FE1
90 ~ 155 130 ~ 220 180 ~ 350
Conditions
VCB = –25V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
*2
*2
*2
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–25
–20
–7
90
25
typ
max
–100
–1
350
– 0.4
–1.2
150
15
25
*2
Pulse measurement
Unit
nA
µA
V
V
V
V
V
MHz
pF
1
Transistor 2SB1378
PC — Ta IC — V
800
)
700
mW
(
C
600
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
25˚C
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
C
IC/IB=10
Ta=–25˚C
75˚C
– 0.3 –3
)
V
CE
)
–1.2
–1.0
)
mA
(
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
300
Ta=75˚C
25˚C
200
–25˚C
100
Forward current transfer ratio h
0
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
C
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
VCE=–2V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
)
Collector current IC (A
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
0
1 10 100 10003 30 300
Emitter current IE (mA
— I
CE(sat)
Ta=75˚C
25˚C
– 0.1 –1 –10
C
IC/IB=10
–25˚C
– 0.3 –3
)
fT — I
E
VCB=–10V
Ta=25˚C
)
Cob — V
80
)
pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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