Panasonic 2SB1371 Datasheet

Po wer Transistors
2SB1371
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD2064
Features
Satisfactory foward current transfer ratio hFE vs. collector cur­rent I
characteristics
C
Wide area of safe operation (ASO) High transition frequency f
T
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Ratings
–120 –120
–5
–10
–6 70
3
150
–55 to +150
Unit
V V V A A
W
˚C ˚C
21.0±0.516.2±0.5
3.5 0.715.0±0.2
12.5 Solder Dip
15.0±0.3
11.0±0.2
φ3.2±0.1
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
321
TOP–3 Full Pack Package(a)
Unit: mm
5.0±0.2
3.2
2.0±0.1
0.6±0.2
1:Base 2:Collector 3:Emitter
Electrical Characteristics (T
Parameter
Collector cutoff current Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
*
h
Rank classification
FE2
Rank Q S P
h
FE2
60 to 120 80 to 160 100 to 200
C
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
=25˚C)
Conditions
VCB = –120V, IE = 0 VEB = –3V, IC = 0 VCE = –5V, IC = –20mA VCE = –5V, IC = –1A VCE = –5V, IC = –4A VCE = –5V, IC = –4A IC = –4A, IB = – 0.4A VCE = –5V, IC = – 0.5A, f = 1MHz VCB = –10V, IE = 0, f = 1MHz
min
20 60 20
typ
15
150
max
–50 –50
200
–1.8 –2.0
Unit
µA µA
V V
MHz
pF
1
Po wer Transistors 2SB1371
PC—Ta IC—V
80
)
70
mW
(
C
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3W)
C
(1)
(2)
(3)
V
CE(sat)—IC
TC=100˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
IC/IB=10
)
CE
–6
–5
) A
(
–4
C
–3
–2
Collector current I
–1
0
0 –12–10–8–2 –6–4
IB=–120mA
–100mA
–80mA
–60mA –40mA
–30mA
–20mA
Collector to emitter voltage VCE (V
hFE—I
C
1000
FE
300
TC=100˚C
100
–25˚C
30
10
3
Forward current transfer ratio h
1
– 0.01
– 0.1 –1 –10
– 0.03
VCE=–5V
25˚C
– 0.3 –3
Collector current IC (A
TC=25˚C
–10mA
)
–6
–5
) A
(
–4
C
–3
–2
Collector current I
–1
0
0–4–1 –3–2
)
Base to emitter voltage VBE (V
1000
)
300
MHz
(
T
100
30
10
3
Transition frequency f
1
– 0.01
IC—V
BE
TC=100˚C
–25˚C
25˚C
fT—I
C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
VCE=–5V
VCE=–5V f=1MHz T
=25˚C
C
)
)
Cob—V
10000
) pF
(
3000
ob
1000
300
100
30
Collector output capacitance C
10
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0 f=1MHz
=25˚C
T
C
) A
(
Collector current I
)
Area of safe operation (ASO)
–100
–30
I
CP
–10
I
C
C
100ms
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=10ms
DC
)
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