Panasonic 2SB1361 Datasheet
Po wer Transistors
2SB1361
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2052
Features
■
●
Satisfactory foward current transfer ratio hFE vs. collector current I
characteristics
●
●
●
■
C
Wide area of safe operation (ASO)
High transition frequency f
T
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Ratings
–150
–150
–5
–15
–9
100
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
21.0±0.516.2±0.5
3.5 0.715.0±0.2
12.5
Solder Dip
15.0±0.3
11.0±0.2
φ3.2±0.1
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
321
TOP–3 Full Pack Package(a)
Unit: mm
5.0±0.2
3.2
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE2
Rank Q S P
h
FE2
60 to 120 80 to 160 100 to 200
C
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
=25˚C)
Conditions
VCB = –150V, IE = 0
VEB = –3V, IC = 0
VCE = –5V, IC = –20mA
VCE = –5V, IC = –1A
VCE = –5V, IC = –7A
VCE = –5V, IC = –7A
IC = –7A, IB = – 0.7A
VCE = –5V, IC = – 0.5A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
min
20
60
20
typ
15
270
max
–50
–50
200
–1.8
–2.0
Unit
µA
µA
V
V
MHz
pF
1
Po wer Transistors 2SB1361
PC—Ta IC—V
120
)
W
(
100
C
80
60
40
20
Collector power dissipation P
0
0 16040 12080 14020 10060
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3W)
C
(1)
(2)
(3)
Ambient temperature Ta (˚C
V
CE(sat)—IC
IC/IB=10
TC=100˚C
25˚C
–25˚C
Collector current IC (A
)
)
CE
–12
–10
)
A
(
–8
C
–6
–4
IB=–300mA
–200mA
–150mA
–100mA
–80mA
–60mA
–40mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE—I
C
1000
FE
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
Forward current transfer ratio h
1
– 0.1 –1 –10 –100– 0.3 –3 –30
VCE=–5V
Collector current IC (A
TC=25˚C
–20mA
–10mA
)
–12
–10
)
A
(
–8
C
–6
–4
Collector current I
–2
0
0–3–2–1
)
Base to emitter voltage VBE (V
1000
)
300
MHz
(
T
100
30
10
3
Transition frequency f
1
– 0.01
IC—V
BE
VCE=–5V
25˚C
TC=–25˚C 100˚C
fT—I
C
VCE=–5V
f=1MHz
T
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
=25˚C
C
)
)
Cob—V
10000
)
pF
(
3000
ob
1000
300
100
30
Collector output capacitance C
10
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
A
(
Collector current I
)
Area of safe operation (ASO)
–100
–30
I
CP
–10
I
C
C
– 0.3
– 0.1
– 0.03
– 0.01
100ms
–3
–1
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=10ms
DC
)
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