Panasonic 2SB1322A Datasheet

Transistors

2SB1322A

Silicon PNP epitaxial planer type

For low-frequency power amplification

Complementary to 2SD1994A

■ Features

• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation
Junction temperature T
Storage temperature T

CBO

CEO

EBO

CP

C

*

P

C

j

stg

Note)*: Printed circuit board: Copper foil area of 1 cm2 or more, and the

board thickness of 1.7 mm for the collector portion

−60 V

−50 V

−5V

−1.5 A

−1A

1W

150 °C

−55 to +150 °C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

−0.05

2.5±0.5 2.5±0.5

Note) In addition to the

lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.

1.2±0.1

+

0.1

0.45

−

0.05

1.05
±0.05 (1.45)

0.21.01.0

+0.1

−0.05

321

0.45

1: Emitter
2: Collector
3: Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW Type)

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

1

Forward current transfer ratio

*

Collector to emitter saturation voltage
Base to emitter saturation voltage

1

*

*

1

CBO

CBO

CEO

EBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

Transition frequency f
Collector output capacitance C

Note)*1: Pulse measurement

2: Rank classification

*

Rank Q R S No-rank

h

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Product of no-rank is not classified and have no indication for rank.

VCB = −20 V, IE = 0 − 0.1 µA
IC = −10 µA, IE = 0 −60 V
IC = −2 mA, IB = 0 −50 V
IE = −10 µA, IC = 0 −5V

2

*

VCE = −10 V, IC = −500 mA 85 340
VCE = −5 V, IC = −1 A 50

= −500 mA, IB = −50 mA − 0.4 V
= −500 mA, IB = −50 mA −1.2 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz

T

VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF

ob

1

2SB1322A Transistors

PC  T

1.2

)

1.0

W

(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

)

−100

V

(

−30

CE(sat)

−10

−3

−1

− 0.3

− 0.1

− 0.03

− 0.01

Collector to emitter saturation voltage V

− 0.01 − 0.03

Copper plate at the collector
is more than 1 cm

1.7 mm in thickness.

Ambient temperature Ta (°C

V

 I

CE(sat)

Ta = 100°C
25°C

− 0.1 − 0.3

Collector current IC (A

a

−25°C

2

in area,

C

IC / IB = 10

−3 −10

)

IC  V

BE(sat)

Ta = −25°C

100°C

CE

Ta = 25°C

IB = −10 mA

 I

C

IC / IB = 10

−1 −3 −10

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

)

)

−1.5

−1.25

)
A

(

−1.0

C

− 0.75

− 0.5

Collector current I

− 0.25

0

0 –10–2 –4 –8–6

)

Collector to emitter voltage VCE (V

V

−100

)
V

(

−30

BE(sat)

−10

−3
25°C

−1

− 0.3

− 0.1

− 0.03

Base to emitter saturation voltage V

− 0.01

− 0.01 − 0.03

− 0.1 − 0.3

Collector current IC (A

−1.2
VCE = −10 V

T

C

−1.0

)
A

(

− 0.8

C

− 0.6

− 0.4

Collector current I

− 0.2

0

0 −12−2 −10−4 −8−6

500

FE

400

300

200

100

Forward current transfer ratio h

0

− 0.01 − 0.03

IC  I

B

= 25°C

Base current IB (mA

h

 I

FE

Ta = 100°C

25°C

−25°C

− 0.1 − 0.3

Collector current IC (A

)

C

VCE = −10 V

−1 −10−3

)

fT  I

200

VCB = −10 V
T

= 25°C

a

180

)

160

MHz

(

140

T

120

100

80

60

40

Transition frequency f

20

0

1 3 10 30 100205250

Emitter current IE (mA

E

)

2

C

 V

ob

60

)
pF

50

(

ob

40

30

20

10

Collector output capacitance C

0

−3 −10 −30 −100

−1

CB

Collector to base voltage VCB (V

IE = 0
f = 1 MHz

= 25°C

T

a

V

 R

−120

)
V

(

−100

CER

−80

−60

−40

−20

Collector to emitter voltage V

0

0.1 0.3 1 3 10 30 100

)

Base to emitter resistance RBE (kΩ

CER

BE

IC = −10 mA

= 25°C

T

a

)