Panasonic 2SB1321A User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1321A

Silicon PNP epitaxial planar type

For low-frequency output amplification and driver amplification

Complementary to 2SD1992A

■ Features

• Allowing supply with the radial taping

• Large collector power dissipation P

(600 mW)

C

(0.7) (4.0)

0.65 max.

6.9

±0.1

(1.0)(0.85)

±0.1

3.5

±0.5

14.5

Unit: mm

2.5

±0.1

(0.8)

(0.8)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−60 V

−50 V

−7V

− 0.5 A

−1A

600 mW

150 °C

0.45

2.5

+0.10
–0.05

±0.5

123

2.5

1.05

±0.5

±0.05

MT-1-A1 Package

+0.10

0.45

–0.05

1: Emitter
2: Collector
3: Base

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE1

h

FE2

CE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

= −10 µA, IE = 0 −60 V

= −2 mA, IB = 0 −50 V

= −10 µA, IC = 0 −7V

VCB = −20 V, IE = 0 − 0.1 µA

VCE = −20 V, IB = 0 −1 µA

2

*

VCE = −10 V, IC = −10 mA 85 340 

1

*

VCE = −10 V, IC = −500 mA 40 

= −300 mA, IB = −30 mA − 0.35 − 0.60 V

VCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz

VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF

Rank Q R S No-rank

h

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Product of no-rank is not classified and have no marking symbol for rank.

Publication date: March 2003 SJC00079BED

1

2SB1321A

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

800

a

)

mW
(

600

C

400

200

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

−100

)
V

(

CE(sat)

−10

−1

− 0.1

Collector-emitter saturation voltage V

− 0.01

− 0.01

CE(sat)

Ta = 75°C

25°C

− 0.1

C

IC / IB = 10

−25°C

−1 −10

Collector current IC (A

IC  V

BE(sat)

Ta = −25°C

75°C

CE

 I

Ta = 25°C

IB = −10 mA

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

C

IC / IB = 10

−

0.8

−

0.7

)

0.6

−

A
(

C

−

0.5

0.4

−

−

0.3

Collector current I

−

0.2

0.1

−

0

0 −10−8−6−4−2

)

600

500

FE

400

300

Ta = 75°C

200

Forward current transfer ratio h

100

−1.2

−1.0

)

A

(

−

0.8

C

−

0.6

−

0.4

Collector current I

−

0.2

0

)

0 –12–2 –10–4 –8–6

Collector-emitter voltage VCE (V

V

−100

)

V

(

BE(sat)

−10

25°C

−1

− 0.1

IC  I

Base current IB (mA

hFE  I

25°C

−25°C

B

VCE = −10 V

= 25°C

T

a

C

VCE = −10 V

)

Base-emitter saturation voltage V

− 0.01

− 0.01

)

− 0.1

Collector current IC (A

−1 −10

)

0

− 0.01

− 0.1

Collector current IC (A

−1 −10

)

fT  I

240

200

)

MHz
(

160

T

120

80

Transition frequency f

40

0

1 10 100

E

Emitter current IE (mA

VCB = −10 V

= 25°C

T

a

)

24

(pF)

ob

20

C

16

12

8

4

Collector output capacitance

(Common base, input open circuited)

0

−1

2

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

−10 −100

Collector-base voltage VCB (V

SJC00079BED

Collector-emitter voltage

)

V

 R

−120

−100

(V)

CER

V

CER

−80

−60

−40

−20

BE

(Resistor between B and E)

0

1 10 100 1 000

Base-emitter resistance RBE (kΩ

IC = −2 mA

= 25°C

T

a

)