Panasonic 2SB1320A User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1320A

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SD1991A

■ Features

• High forward current transfer ratio h

• Allowing supply with the radial taping

FE

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−60 V

−50 V

−7V

−100 mA

−200 mA

400 mW

150 °C

(0.7) (4.0)

0.65 max.

+0.10

0.45

–0.05

2.5

6.9

±0.1

±0.5

123

2.5

(1.0)(0.85)

1.05

±0.5

Unit: mm

2.5
(0.8)

±0.1

3.5

±0.5

14.5

±0.05

MT-1-A1 Package

(0.8)

0.45

1: Emitter
2: Collector
3: Base

±0.1

+0.10
–0.05

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S No-rank

h

FE

160 to 260 210 to 340 290 to 460 160 to 460

Product of no-rank is not classified and have no marking symbol for rank.

Publication date: March 2003 SJC00078BED

= −10 µA, IE = 0 −60 V

= −2 mA, IB = 0 −50 V

= −10 µA, IC = 0 −7V

VCB = −20 V, IE = 0 −1 µA

VCE = −20 V, IB = 0 −1 µA

VCE = −10 V, IC = −2 mA 160 460 

= −100 mA, IB = −10 mA −1V

VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz

VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF

1

2SB1320A

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

500

)

mW

400

(

C

300

200

100

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IB  V

−400

−350

−300

)

µA

(

−250

B

−200

−150

Base current I

−100

−50

0

0 − 0.4 − 0.8 −1.2 −1.6

Base-emitter voltage V

a

BE

VCE = −5 V

= 25°C

T

a

(V

BE

IC  V

IC  V

25°C

CE

IB = −300 µA

BE

−25°C

T

= 25°C

a

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

VCE = −5 V

)

(V

BE

−60

−50

)

mA
(

−40

C

−30

−20

Collector current I

−10

0

0 −300−200−100 −400

)

−10

)
V

(

CE(sat)

−1

− 0.1

− 0.01

Collector-emitter saturation voltage V

− 0.001

−1

−120

−100

)

mA
(

−80

C

−60

−40

Collector current I

−20

0

0 −12−2 −10−4 −8−6

)

Collector-emitter voltage VCE (V

−240

−200

)

mA
(

−160

C

−120

−80

Ta = 75°C

Collector current I

−40

0

0 −2.0−1.6−1.2

− 0.4 − 0.8

)

Base-emitter voltage V

IC  I

B

VCE = −5 V

= 25°C

T

a

Base current IB (µA

V

 I

CE(sat)

25°C

−10 −100 −1 000

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (mA

)

)

hFE  I

600

500

FE

400

Ta = 75°C

300

25°C

−25°C

200

Forward current transfer ratio h

100

0

−1

−10 −100 −1 000

Collector current IC (mA

C

VCE = −5 V

160

VCB = −10 V
T

140

)

120

MHz
(

T

100

80

60

40

Transition frequency f

20

0

0.1 1 10 100

)

2

fT  I

= 25°C

a

Emitter current IE (mA

SJC00078BED

E

8

(pF)

ob

C

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

)

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

)